Optical dephasing in CdSSe mixed crystals studied by coherent transient grating experiments

1990 ◽  
Vol 101 (1-4) ◽  
pp. 731-733 ◽  
Author(s):  
G. Noll ◽  
U. Siegner ◽  
E.O. Göbel ◽  
H. Schwab ◽  
R. Renner ◽  
...  
Keyword(s):  
Mixed Crystals ◽  
Transient Grating ◽  
Optical Dephasing

Optical dephasing of molecular dimers in mixed crystals: Picosecond photon echo experiments

1984 ◽  
Vol 110 (1) ◽  
pp. 7-13 ◽  
Author(s):  
F.G. Patterson ◽  
William L. Wilson ◽  
H.W.H. Lee ◽  
M.D. Fayer
Keyword(s):  
Photon Echo ◽  
Mixed Crystals ◽  
Optical Dephasing

Optical dephasing in semiconductor mixed crystals

1992 ◽  
Vol 46 (8) ◽  
pp. 4564-4581 ◽  
Author(s):  
U. Siegner ◽  
D. Weber ◽  
E. O. Göbel ◽  
D. Bennhardt ◽  
V. Heuckeroth ◽  
...  
Keyword(s):  
Mixed Crystals ◽  
Optical Dephasing

Optical dephasing and energy migration in disordered molecular mixed crystals

1980 ◽  
Vol 76 (2) ◽  
pp. 218-220 ◽  
Author(s):  
Jos B.W. Morsink ◽  
Bob Kruizinga ◽  
Douwe A. Wiersma
Keyword(s):  
Energy Migration ◽  
Mixed Crystals ◽  
Optical Dephasing

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

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