Electrical resistivity change in Cu and AI stabilizer materials for superconducting magnet after low-temperature neutron irradiation

1985 ◽  
Vol 135 (1) ◽  
pp. 32-39 ◽  
Author(s):  
Kiyotomo Nakata ◽  
Saburo Takamura ◽  
Naofumi Tada ◽  
Isao Masaoka
1974 ◽  
Vol 22 (2) ◽  
pp. 501-510 ◽  
Author(s):  
W. Dönitz ◽  
W. Hertz ◽  
W. Waidelich ◽  
H. Peisl ◽  
K. Böning

1968 ◽  
Vol 46 (5) ◽  
pp. 321-324 ◽  
Author(s):  
H. H. Neely

The low-temperature recovery of the electrical resistivity of polycrystalline zirconium was measured after electron irradiation below 8 °K. The material used in this irradiation was the same low oxygen material (0.015 at.%) used by Swanson to study recovery after deformation at 4.2 °K. Substage IB was found to be only of the order of 4% of the irradiation-induced resistivity change, compared to ~6% observed by Swanson after deformation. Stage I (4.2 to 160 °K) in Zr contains six substages, while stage II (160 to 310 °K) contains only one substage after electron irradiation. While no study of kinetics was made, it seems likely that close pair-annihilation processes are responsible for the recovery spectrum below 118 °K and that longer-range defect migration occurs in the neighborhood of 140 °K.


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