scholarly journals Characterization of a chromium-gold deposition process for the production of thin film hybrid microcircuits

1975 ◽  
Vol 14 (3) ◽  
pp. 284
Keyword(s):  
Thin Film ◽  
Deposition Process ◽  
Gold Deposition

Characterization of thin film produced by quantum dot deposition process

1996 ◽  
Vol 27 ◽  
pp. S149-S150 ◽  
Author(s):  
Shigeo Aono ◽  
Masayuki Itoh ◽  
Hiroshi Takano ◽  
Susumu Tohno
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Deposition Process

Thin Film Transistors based on Microcrystalline Silicon on Polyimiide Substrates

1999 ◽  
Vol 557 ◽  
Author(s):  
A.P. Constant ◽  
T. Witt ◽  
K.A. Bratland ◽  
H.R. Shanks ◽  
A.R. Landin
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Hall Mobility ◽  
Material Characterization ◽  
Thin Film Transistors ◽  
Deposition Process ◽  
Device Performance ◽  
Microcrystalline Silicon ◽  
Deposition Parameters

AbstractThis study reports on the fabrication of inverted gate TFT devices and circuits using a low temperature microcrystalline silicon deposition process compatible with polyimide substrates. Results from the electrical and material characterization of μ-Si:H based TFT's are presented. Device performance is compared with that of α-Si:H based TFT's constructed on polyimide. Results indicate that the anticipated improvement in device performance due to an increase in the α-Si:H Hall mobility (~10 cm2/V-sec) over that of α-Si:H (~1 cm2/V-sec) is not realized. Properties of μ-Si:H films are related to deposition parameters.

Sign in / Sign up

Export Citation Format

Share Document