Characterization of thin film cadmium sulfide grown using a modified chemical bath deposition process

2005 ◽  
Author(s):  
M.D. Archbold ◽  
D.P. Halliday ◽  
K. Durose ◽  
T.P.A. Hase ◽  
D. Smyth-Boyle ◽  
...  
Keyword(s):  
Thin Film ◽  
Cadmium Sulfide ◽  
Chemical Bath Deposition ◽  
Deposition Process

ZnS thin film deposited with chemical bath deposition process directed by different stirring speeds

2010 ◽  
Vol 256 (22) ◽  
pp. 6871-6875 ◽  
Author(s):  
Y. Zhang ◽  
X.Y. Dang ◽  
J. Jin ◽  
T. Yu ◽  
B.Z. Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Bath Deposition ◽  
Deposition Process

Growth Mechanism of thin Film Wide-Gap Semiconductors by Chemical Bath Deposition Technique

1999 ◽  
Vol 558 ◽  
Author(s):  
P. K. Nair ◽  
P. Parmananda ◽  
M. T. S. Nair
Keyword(s):  
Thin Film ◽  
Mathematical Model ◽  
Chemical Bath Deposition ◽  
Growth Mechanism ◽  
Dissociation Constants ◽  
Growth Curves ◽  
Deposition Process ◽  
Terminal Phase ◽  
Semiconductor Films ◽  
Complex Ions

ABSTRACTChemical bath deposition is a thin film technique in which semiconductor thin films of typically 0.02 – 1 μm thickness are deposited on substrates immersed in dilute baths containing metal ions and a source of sulfide or selenide ions. Many I–VI, II–VI, IV–VI, and V–VI semiconductors are included in the list of materials deposited by this technique, II–VI compounds CdS, CdSe, ZnS and ZnSe being the most investigated. However, a mathematical model describing the growth mechanism of these films still remains to be established. The deposition process consists of a nucleation phase, growth phase, and a terminal phase, each of which depends on the concentration of the ions in the deposition bath, its temperature, dissociation constants of the metal complex ions, etc. In this paper we propose a mathematical model, which can qualitatively account for most of the features of the experimental growth curves of chemically deposited semiconductor films.

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

2019 ◽  
Vol 969 ◽  
pp. 433-438 ◽  
Author(s):  
Dattatraya K. Sonavane ◽  
S.K. Jare ◽  
M.A. Shaikh ◽  
R.V. Kathare ◽  
R.N. Bulakhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Band Gap Energy ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Double Beam

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

Characterization of thin film produced by quantum dot deposition process

1996 ◽  
Vol 27 ◽  
pp. S149-S150 ◽  
Author(s):  
Shigeo Aono ◽  
Masayuki Itoh ◽  
Hiroshi Takano ◽  
Susumu Tohno
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Deposition Process
Sign in / Sign up

Export Citation Format

Share Document