Optical transient induced absorption in ultrasmall particles of amorphous selenium

1996 ◽  
Vol 125 (1-3) ◽  
pp. 59-64 ◽  
Author(s):  
K.V Yumashev ◽  
V.P Mikhailov ◽  
P.V Prokoshin ◽  
M.V Artemyev ◽  
V.S Gurin
1996 ◽  
Vol 64 (1) ◽  
pp. 73-78 ◽  
Author(s):  
K. V. Yumashev ◽  
P. V. Prokoshin ◽  
A. M. Malyarevich ◽  
V. P. Mikhailov ◽  
M. V. Artemyev ◽  
...  

2000 ◽  
Vol 70 (1) ◽  
pp. 111-116 ◽  
Author(s):  
A.M. Malyarevich ◽  
K.V. Yumashev ◽  
N.N. Posnov ◽  
V.P. Mikhailov ◽  
V.S. Gurin

1994 ◽  
Vol 24 (9) ◽  
pp. 828-831
Author(s):  
K V Yumashev ◽  
V P Mikhailov ◽  
V S Gurin ◽  
P V Prokoshin ◽  
M V Artem'ev ◽  
...  

2014 ◽  
Vol 880 ◽  
pp. 13-18 ◽  
Author(s):  
Viktor M. Lisitsyn ◽  
Yevgeniy V. Bikhert ◽  
Ludmila A. Lisitsyna ◽  
Alma K. Dauletbekova ◽  
Vladimir M. Reyterov ◽  
...  

The paper presents the experimental results for the spectra of the luminescence burst and induced optical transient absorption in YLiF4 crystals when exposed to the electron pulse of nanosecond duration over a wide temperature range. The luminescence spectrum consists of two bands with peaks at 4.4 and 3.2 eV, and in the spectrum of induced absorption the main bands are found at 2.1 and 3.7 eV. The luminescence at 3.2 eV decays faster than the bandwidth at 4.4 eV. The luminescence intensity decreases sharply at temperatures above 30 K. The induced absorption decreases at temperatures above 60 K. It is assumed that the kinetic curves of luminescence burst and transient absorption in excitation by radiation fluxes are related.


Author(s):  
V. I. Mikla ◽  
I. P. Mikhalko ◽  
V. V. Mikla ◽  
Yu. Yu. Nagy

2015 ◽  
Vol 11 (1) ◽  
pp. 2914-2917
Author(s):  
Alekberov R.I ◽  
Mekhtiyeva S.I ◽  
Isayev A.I ◽  
Mammadova H.I.

In work investigated with method IR of spectroscopy of amorphous selenium andsystem Se95As5 containing impurity samarium. It is certain that, in IR a spectrum of amorphous selenium due to hypervalent defects maxima with different intensity are observed in 230 and 270 cm-1.Increase of the concentration of impurity samarium in spectrum Se95As5, the maximum arises with 400cm-1frequency which, are connected with SmSe3 structural elements.


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