Dynamics of Strong Coupling Between Free Charge Carriers in Organometal Halide Perovskites and Aluminum Plasmonic States

We have investigated a strong coupled system composed of a MAPbIxCl3-x perovskite film and aluminum conical nanopits array. The hybrid states formed by surface plasmons and free carriers, rather than the traditional excitons, is observed in both steady-state reflection measurements and transient absorption spectra. In particular, under near upper band resonant excitation, the bleaching signal from the band edge of uncoupled perovskite was completely separated into two distinctive bleaching signals of the hybrid system, which is clear evidence for the formation of strong coupling states between the free carrier–plasmon state. Besides this, a Rabi splitting up to 260 meV is achieved. The appearance of the lower bands can compensate for the poor absorption of the perovskite in the NIR region. Finally, we found that the lifetime of the free carrier–SP hybrid states is slightly shorter than that of uncoupled perovskite film, which can be caused by the ultrafast damping of the SPs modes. These peculiar features on the strong coupled hybrid states based on free charge carriers can open new perspectives for novel plasmonic perovskite solar cells.

Probing Perovskite Carrier Dynamics under Sunlight

Understanding the nature of photogenerated carriers and their subsequent dynamics in perovskites is important for the development of related materials and devices. Most ultrafast dynamic measurements on the perovskite materials were conducted under high carrier densities, which likely obscures the genuine dynamics at low carrier densities under solar illumination conditions. In this study, we presented a detailed experimental study of the carrier density-dependent dynamics in hybrid lead iodide perovskites using a highly sensitive transient absorption spectrometer. We found that the carrier lifetime was about a hundred nanosecond in the linear response range, representing sunlight excitation, which was much longer than under high carrier densities. We also elucidated that the fast carrier decay (<1 ps) and the medium decay processes (tens of ps) occurred via the defect state trapping, and we determined its effects on the utilization percentage of photogenerated carriers through quantitative analysis. Furthermore, we obtained the Shockley-Queisser limit that took into account the carrier trapping effect, which directly reflected the material performance.

Regulation of the luminescence mechanism of two-dimensional tin halide perovskites

Two-dimensional (2D) Sn-based perovskites are a kind of non-toxic environment-friendly luminescent material. However, the research on the luminescence mechanism of this type of perovskite is still very controversial, which greatly limits the further improvement and application of the luminescence performance. At present, the focus of controversy is defects and phonon scattering rates. In this work, we combine the organic cation control engineering with temperature-dependent transient absorption spectroscopy to systematically study the interband exciton relaxation pathways in layered A2SnI4 (A = PEA+, BA+, HA+, and OA+) structures. It is revealed that exciton-phonon scattering and exciton-defect scattering have different effects on exciton relaxation. Our study further confirms that the deformation potential scattering by charged defects, not by the non-polar optical phonons, dominates the excitons interband relaxation, which is largely different from the Pb-based perovskites. These results enhance the understanding of the origin of the non-radiative pathway in Sn-based perovskite materials.

p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions

Cu3N with a cubic crystal structure is obtained in this paper by the sputtering of Cu under N2 followed by annealing under NH3: H2 at 400 °C, after which it was doped with iodine at room temperature resulting into p-type Cu3N with hole densities between 1016 and 1017 cm−3. The Cu3N exhibited distinct maxima in differential transmission at ~2.01 eV and 1.87 eV as shown by ultrafast pump-probe spectroscopy, corresponding to the M and R direct energy band gaps in excellent agreement with density functional theory calculations, suggesting that the band gap is clean and free of mid-gap states. The Cu3N was gradually converted into optically transparent γ-CuI that had a hole density of 4 × 1017 cm−3, mobility of 12 cm2/Vs and room temperature photoluminescence at 3.1 eV corresponding to its direct energy band gap. We describe the fabrication and properties of γ-CuI/TiO2/Cu3N and γ-CuI/Cu3N p-n heterojunctions that exhibited rectifying current-voltage characteristics, but no photogenerated current attributed to indirect recombination via shallow states in Cu3N and/or deep states in the γ-CuI consistent with the short (ps) lifetimes of the photoexcited electrons-holes determined from transient absorption–transmission spectroscopy.

Surface Charge Transfer Doping of MoS2 Monolayer by Molecules with Aggregation-Induced Emission Effect

Surface charge transfer doping has attracted much attention in modulating the optical and electrical behavior of 2D transition metal dichalcogenides (TMDCs), where finding controllable and efficient dopants is crucial. Here, 1,1,2,2-tetraphenylethylene (TPE) derivative molecules with aggregation-induced emission (AIE) effect were selected as adjustable dopants. By designing nitro and methoxyl functional groups and surface coating, controlled p/n-type doping can be achieved on a chemical vapor deposition (CVD) grown monolayer, MoS2. We investigated the electron transfer behavior between these two dopants and MoS2 with fluorescence, Raman, X-ray photoelectron spectra and transient absorption spectra. 1,1,2,2-Tetrakis(4-nitrophenyl)ethane (TPE-4NO2) with a negative charge aggregation can be a donor to transfer electrons to MoS2, while 1,1,2,2-Tetrakis(4-methoxyphenyl)ethane (TPE-4OCH3) is the opposite and electron-accepting. Density functional theory calculations further explain and confirm these experimental results. This work shows a new way to select suitable dopants for TMDCs, which is beneficial for a wide range of applications in optoelectronic devices.

Ultrafast transient absorption spectroelectrochemistry: femtosecond to nanosecond excited-state relaxation dynamics of the individual components of an anthraquinone redox couple

A spectroelectrochemical set-up using a boron doped diamond mesh electrode is presented; from ultrafast photodynamics to steady-state, the photochemistry and photophysics of redox active species and their reactive intermediates can be investigated.