Shallow donors in high magnetic fields in narrow GAP semiconductors

1985 ◽  
Vol 53 (12) ◽  
pp. 1144-1145
Author(s):  
W. Trzeciakowski ◽  
S. Huant ◽  
M. Baj
Keyword(s):  
Magnetic Fields ◽  
High Magnetic Fields ◽  
Narrow Gap ◽  
Narrow Gap Semiconductors ◽  
Shallow Donors

MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS

SPIN ◽  
2013 ◽  
Vol 03 (04) ◽  
pp. 1340011
Author(s):  
B. W. WESSELS
Keyword(s):  
Magnetic Fields ◽  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
High Magnetic Fields ◽  
Narrow Gap ◽  
Carrier Scattering ◽  
Spin Polarized ◽  
Semiconductor Spintronics ◽  
Semiconductor Heterojunctions

Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

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