Weak localization in the narrow gap bulk semiconductors Hg1-xCdxTe and InSb

1991 ◽  
Vol 79 (8) ◽  
pp. 693-697 ◽  
Author(s):  
R.G. Mani ◽  
L. Ghenim ◽  
J.B. Choi
Keyword(s):  
Weak Localization ◽  
Narrow Gap ◽  
Bulk Semiconductors

Structural and Electronic Properties of Narrow Gap Zincblende and Chalcopyrite Compounds

1990 ◽  
Vol 193 ◽  
Author(s):  
T.M. de Pascale ◽  
F. Meloni ◽  
M. Serra ◽  
S. Massidda ◽  
A. Continenza ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Full Potential ◽  
Narrow Gap ◽  
Augmented Plane Wave ◽  
Bulk Semiconductors ◽  
Structural And Electronic Properties ◽  
Indium Compounds ◽  
Linearized Augmented Plane Wave ◽  
Ternary Semiconductors

ABSTRACTIndium compounds and corresponding epitaxially grown superlattices have provided good single crystals suitable for accurate experimental measurements and have added new interest to the study of the constituent bulk semiconductors and the II-IV-V2 chalcopyrite crystal phases. This paper reports results of structural and electronic properties of narrow gap binary and ternary semiconductors determined selfconsistently from first principles using both the full potential linearized augmented plane wave (FLAPW) and norm-conserving pseudopotentials (PP) total-energy methods.

Free-Carrier Induced Optical Nonlinearities in Narrow Bandgap Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D. Walrod ◽  
S. Y. Auyang ◽  
P. A. Wolff
Keyword(s):  
Relaxation Times ◽  
Free Carrier ◽  
Optical Nonlinearities ◽  
Narrow Gap ◽  
Exact Matching ◽  
Third Order ◽  
Material Parameters ◽  
Narrow Bandgap ◽  
Bulk Semiconductors ◽  
Bandgap Semiconductors

ABSTRACTFree-carrier induced third-order optical nonlinearities can be both large and fast in narrow-gap semiconductors. We have studied a variety of mechanisms in bulk semiconductors and heterostructures using CO2 lasers and found third-order susceptibilities as large as 2×10−3 esu with picosecond relaxation times. These mechanisms saturate at much higher intensities than do slower mechanisms and hence induce huge modulations of the dielectric function. In addition, most of these processes are nonresonant so they do not require the exact matching of material parameters and are relatively insensitive to temperature.

Gate controlled crossover from weak localization to weak antilocalization in a narrow gap In0.8Ga0.2As/InP heterostructure

2006 ◽  
Vol 3 (12) ◽  
pp. 4239-4242 ◽  
Author(s):  
Takayuki Nihei ◽  
Yoshifumi Suzuki ◽  
Makoto Kohda ◽  
Junsaku Nitta
Keyword(s):  
Weak Localization ◽  
Narrow Gap ◽  
Weak Antilocalization

Properties of Creeping Discharge in Narrow Gap between Dielectric Plates in PFAE Oil

2011 ◽  
Vol 131 (10) ◽  
pp. 817-823
Author(s):  
Takuro Usui ◽  
Ryoichi Hanaoka ◽  
Shinzo Takata ◽  
Yasunori Kanamaru ◽  
Hidenobu Koide ◽  
...  
Keyword(s):  
Narrow Gap ◽  
Creeping Discharge
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