Dynamics of Strong Coupling Between Free Charge Carriers in Organometal Halide Perovskites and Aluminum Plasmonic States

We have investigated a strong coupled system composed of a MAPbIxCl3-x perovskite film and aluminum conical nanopits array. The hybrid states formed by surface plasmons and free carriers, rather than the traditional excitons, is observed in both steady-state reflection measurements and transient absorption spectra. In particular, under near upper band resonant excitation, the bleaching signal from the band edge of uncoupled perovskite was completely separated into two distinctive bleaching signals of the hybrid system, which is clear evidence for the formation of strong coupling states between the free carrier–plasmon state. Besides this, a Rabi splitting up to 260 meV is achieved. The appearance of the lower bands can compensate for the poor absorption of the perovskite in the NIR region. Finally, we found that the lifetime of the free carrier–SP hybrid states is slightly shorter than that of uncoupled perovskite film, which can be caused by the ultrafast damping of the SPs modes. These peculiar features on the strong coupled hybrid states based on free charge carriers can open new perspectives for novel plasmonic perovskite solar cells.

Characterization of In(Ga,Al)As/GaAs metamorphic heterostructures for mid-IR emitters by FTIR photoreflectance spectroscopy

Infrared photoreflectance (PR) spectra of In(Ga,Al)As/GaAs metamorphic heterostructures have been obtained using a novel photomodulation FTIR spectroscopy technique. An analysis of the PR spectra features allowed us to estimate the critical point energies corresponding to the direct interband transitions in various regions of the In(Ga,Al)As heterostructures, and distinguish the PR signals originating from Fabry-Perot interference. Observation of Franz-Keldysh oscillations originating from the InAlAs virtual substrate and an InGaAs waveguide layer has enabled determination of the built-in electric field intensities within the heterostructures. The obtained results open up possibilities for contactless control of free carrier concentration in In(Ga,Al)As/GaAs metamorphic heterostructures developed for growth of emitters of mid-IR spectral range.