hall effect
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2022 ◽  
Vol 105 (4) ◽  
Author(s):  
Huiying Liu ◽  
Jianzhou Zhao ◽  
Yue-Xin Huang ◽  
Xiaolong Feng ◽  
Cong Xiao ◽  
...  

2022 ◽  
Vol 105 (2) ◽  
Author(s):  
S. Suetsugu ◽  
T. Yokoi ◽  
K. Totsuka ◽  
T. Ono ◽  
I. Tanaka ◽  
...  

Symmetry ◽  
2022 ◽  
Vol 14 (1) ◽  
pp. 130
Author(s):  
Konstantinos N. Gourgouliatos ◽  
Davide De Grandis ◽  
Andrei Igoshev

Neutron stars host the strongest magnetic fields that we know of in the Universe. Their magnetic fields are the main means of generating their radiation, either magnetospheric or through the crust. Moreover, the evolution of the magnetic field has been intimately related to explosive events of magnetars, which host strong magnetic fields, and their persistent thermal emission. The evolution of the magnetic field in the crusts of neutron stars has been described within the framework of the Hall effect and Ohmic dissipation. Yet, this description is limited by the fact that the Maxwell stresses exerted on the crusts of strongly magnetised neutron stars may lead to failure and temperature variations. In the former case, a failed crust does not completely fulfil the necessary conditions for the Hall effect. In the latter, the variations of temperature are strongly related to the magnetic field evolution. Finally, sharp gradients of the star’s temperature may activate battery terms and alter the magnetic field structure, especially in weakly magnetised neutron stars. In this review, we discuss the recent progress made on these effects. We argue that these phenomena are likely to provide novel insight into our understanding of neutron stars and their observable properties.


2022 ◽  
Vol 5 (1) ◽  
Author(s):  
Hiroyuki Moriya ◽  
Akira Musha ◽  
Satoshi Haku ◽  
Kazuya Ando

AbstractThe physics of the anomalous and spin Hall effects is one of the most intriguing aspects of condensed matter physics. An important finding from a large collection of experimental and theoretical results is the universal scaling of the anomalous or spin Hall conductivity with the electric conductivity. This scaling has been successfully described by the intrinsic Berry curvature and extrinsic scattering mechanisms for metallic systems, revealing the topological nature of these effects. In contrast, the underlying physics in the opposite limit, the disordered insulating regime, is still unclear. In particular, it remains a major challenge, both experimentally and theoretically, to explore the spin Hall effect in the insulating regime. Here, we report the observation of the crossover between the metallic and insulating regimes of the spin Hall effect. The result demonstrates a direct correspondence between the spin and anomalous Hall effects, which will advance the fundamental understanding of spin transport.


2022 ◽  
Author(s):  
Yunpeng Wu ◽  
Shuoqing Liu ◽  
Shizhen Chen ◽  
Hailu Luo ◽  
Shuangchun Wen

2022 ◽  
Vol 2022 ◽  
pp. 1-13
Author(s):  
Majid Nour ◽  
Nihat Daldal ◽  
Mehmet Fatih Kahraman ◽  
Hatem Sindi ◽  
Adi Alhudhaif ◽  
...  

A tilt sensor is a device used to measure the tilt on many axes of a reference point. Tilt sensors measure the bending position according to gravity and are used in many applications. Slope sensors allow easy detection of direction or slope in the air. These tilt gauges have become increasingly popular and are being adapted for a growing number of high-end applications. As an example of practical application, the tilt sensor provides valuable information about an aircraft’s vertical and horizontal tilt. This information also helps the pilot understand how to deal with obstacles during flight. In this paper, Hall-effect effective inclination and acceleration sensor design, which makes a real-time measurement, have been realized. 6 Hall-effect sensors with analog output (UGN-3503) have been used in the sensor structure. These sensors are placed in a machine, and the hall sensor outputs are continuously read according to the movement speed and direction of the sphere magnet placed in the assembly. Hall sensor outputs produce 0–5 Volt analog voltage according to the position of the magnet sphere to the sensor. It is clear that the sphere magnet moves according to the inclination of the mechanism when the mechanism is moved angularly, and the speed of movement from one point to the other changes according to the movement speed. Here, the sphere magnet moves between the hall sensors in the setup according to the ambient inclination and motion acceleration. Each sensor produces analog output values in the range of 0–5 V instantaneous according to the position of the spheroid. Generally defined, according to the sphere magnet position and movement speed, the data received from the hall sensors by the microcontroller have been sent to the computer or microcomputer unit as UART. In the next stage, the actual sensor has been removed. The angle and acceleration values have been continuously produced according to the mechanism’s movement and output as UART. Thanks to the fact that the magnet is not left idle and is fixed with springs, problems such as vibration noises and wrong movements and the magnet leaning to the very edge and being out of position even at a slight inclination are prevented. In addition, the Hall-effect sensor outputs are given to an artificial neural network (ANN), and the slope and acceleration information is estimated in the ANN by training with the data obtained from the real-time slope and accelerometer sensor.


2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Yohei Yomogida ◽  
Kanako Horiuchi ◽  
Ryotaro Okada ◽  
Hideki Kawai ◽  
Yota Ichinose ◽  
...  

AbstractThe presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.


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