A new method of surface structure-analysis by medium energy electron diffraction: distinction between T4 and H3 models for the Si(111)√3 × √3 -In surface

1992 ◽  
Vol 262 (3) ◽  
pp. L101-L106 ◽  
Author(s):  
N. Nakamura ◽  
K. Anno ◽  
S. Kono
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
Structure Analysis ◽  
Energy Electron ◽  
New Method ◽  
Medium Energy

Surface structure analysis using reflection high‐energy electron diffraction

1988 ◽  
Vol 6 (3) ◽  
pp. 611-614 ◽  
Author(s):  
K. D. Jamison ◽  
D. N. Zhou ◽  
P. I. Cohen ◽  
T. C. Zhao ◽  
S. Y. Tong
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
Structure Analysis ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Structure Determination of the Nisi2(111) Surface Using Medium Energy Ion Scattering with Monolayer Resolution

1990 ◽  
Vol 202 ◽  
Author(s):  
J. Vrijmoeth ◽  
P.M. Zagwijn ◽  
J.W.M. Frenken ◽  
J.F. van der Veen
Keyword(s):  
Surface Structure ◽  
Structure Determination ◽  
New Method ◽  
Medium Energy ◽  
Ion Scattering ◽  
Triple Layer ◽  
Medium Energy Ion Scattering

ABSTRACTThe surface structure of epitaxial NiSi2 films grown on Si (111) has been determined using a new method. The backscattering signals from subsequent Ni layers in the NiSi2 (111) surface are resolved.The topology of the NiSi2 (111) surface is concluded to be bulklike, i.e., it is terminated by a Si – Ni – Si triple layer.

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