Holographic inversion of photoelectron diffraction patterns from Cu(001)

1992 ◽  
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Author(s):  
A. Stuck ◽  
D. Naumović ◽  
H.A. Aebischer ◽  
T. Greber ◽  
J. Osterwalder ◽  
...  
1994 ◽  
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M. Weinelt ◽  
P. Zebisch ◽  
M. Stichler ◽  
H. -P. Steinrück

1994 ◽  
Vol 312 (1-2) ◽  
pp. 82-96 ◽  
Author(s):  
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D. Mehl ◽  
M. Weinelt ◽  
P. Zebisch ◽  
H.-P. Steinrück

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Vol 71 (1) ◽  
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Xingyu Gao ◽  
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...  

1995 ◽  
Vol 334 (1-3) ◽  
pp. 114-134 ◽  
Author(s):  
M. Zharnikov ◽  
M. Weinelt ◽  
P. Zebisch ◽  
M. Stichler ◽  
H.-P. Steinrück

1993 ◽  
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S. Hüfner

1991 ◽  
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Y. Tezuka ◽  
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N. Kanada ◽  
S.K. Lee ◽  
...  

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Vol 09 (02) ◽  
pp. 735-740 ◽  
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S. DREINER ◽  
M. SCHÜRMANN ◽  
H. ZACHARIAS

Angle-scanned photoelectron diffraction patterns of the Si 2p signal of oxidized Si(111) and Si(001) surfaces have been recorded and compared with simulations. The chemically shifted components of the Si 2p signal were deconvoluted by least squares fitting. The different oxidation states exhibit individual diffraction patterns for both surface orientations, indicating a different environment for each suboxide. For the Si(111) surface the results agree with a previously proposed sharp interface, whereas a graded interface is indicated for the Si(001) surface.


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