Electronic stopping power measurements using secondary ion beams

1994 ◽  
Vol 66 (1-3) ◽  
pp. 231-234 ◽  
Author(s):  
N. Nath ◽  
O.P. Dahinwal ◽  
A. Bhagwat ◽  
D.K. Avasthi ◽  
V. Harikumar ◽  
...  
1983 ◽  
Vol 206 (3) ◽  
pp. 609-612 ◽  
Author(s):  
H. Geissel ◽  
Y. Laichter ◽  
R. Albrecht ◽  
T. Kitahara ◽  
J. Klabunde ◽  
...  

1986 ◽  
Vol 1 (2) ◽  
pp. 231-233 ◽  
Author(s):  
R.G. Stokstad ◽  
P.M. Jacobs ◽  
I. Tserruya ◽  
L. Sapir ◽  
G. Mamane

The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th (cm−2) = 1017 (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV mg−1 cm−2) of the ion in Au. For the Au-Si system, Dth = 6×1018 (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed.


1990 ◽  
Vol 68 (4) ◽  
pp. 1545-1549 ◽  
Author(s):  
M. Toulemonde ◽  
N. Enault ◽  
Jin Yun Fan ◽  
F. Studer

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