Galvanic corrosion inhibition from aspect of bonding orbital theory in Cu/Ru barrier CMP

In this report, the galvanic corrosion inhibition between Cu and Ru metal films is studied, based on bonding orbital theory, using pyridinecarboxylic acid groups which show different affinities depending on the electron configuration of each metal resulting from a π-backbonding. The sp2 carbon atoms adjacent to nitrogen in the pyridine ring provide π-acceptor which forms a complex with filled d-orbital of native oxides on Cu and Ru metal film. The difference in the d-orbital electron density of each metal oxide leads to different π-backbonding strength, resulting in dense or sparse adsorption on native metal oxides. The dense adsorption layer is formed on native Cu oxide film due to the full-filled d-orbital electrons, which effectively suppresses anodic reaction in Cu film. On the other hand, only a sparse adsorption layer is formed on native Ru oxide due to its relatively weak affinity between partially filled d-orbital and pyridine groups. The adsorption behaviour is investigated through interfacial interaction analysis and electrochemical interaction evaluation. Based on this finding, the galvanic corrosion behaviour between Cu and Ru during chemical mechanical planarization (CMP) processing has been controlled.

GaAs to Si Direct Wafer Bonding at T ≤ 220°C in Ambient Air via Nano-BondingTM and Surface Energy Engineering (SEE)

When different semiconductors are integrated into hetero-junctions, native oxides generate interfacial defects and cause electronic recombination. Two state-of-the-art integration methods, hetero-epitaxy and Direct Wafer Bonding (DWB), require temperatures > 400°C to reduce native oxides. However, T > 400°C leads to defects due to lattice and thermal expansion mismatches. In this work, DWB temperatures are lowered via Nano-Bonding™ (NB) at T ≤ 220°C and P ≤ 60 kPa (9 psi). NB uses Surface Energy Engineering (SEE) at 300K to modify surface energies (γT) to far-from-equilibrium states, so cross-bonding occurs with little thermal activation and compression. SEE modifies γT and hydro-affinity (HA) via chemical etching, planarization, and termination that are optimized to yield 2-D Precursor Phases (2D-PP) metastable in ambient air and highly planar at the nano- and micro- scales. Complementary 2D-PPs nano-contact via carrier exchange from donor 2D-PP surfaces to acceptor ones. Here, NB models and SEE are applied to the DWB of GaAs to Si for photo-voltaics. SEE modifies (1) the initial γT0 and HA0 measured via Three Liquid Contact Angle Analysis, (2) the oxygen coverage measured via High Resolution Ion Beam Analysis, and (3) the oxidation states measured via X-Ray Photoelectron Spectroscopy. SEE etches hydrophobic GaAs oxides with γT = 33.4 ± 1 mJ/m2, and terminates GaAs (100) with H+, rendering GaAs hydrophilic with γT = 60 ± 2 mJ/m2. Similarly, hydrophilic Si native oxides are etched into hydrophobic SiO4H2. H+- GaAs nano-bonds reproducibly to Si, as measured via Surface Acoustic Wave Microscopy, validating the NB model and SEE design.

Получение атомарно-чистых и структурно-упорядоченных поверхностей эпитаксиальных пленок CdTe для последующей эпитаксии

In this work, atomically clean and structurally ordered surface of CdTe epitaxial layer after storage in air by treatment in isopropyl alcohol saturated with vapors of hydrochloric acid, and further temperature heating in an ultrahigh vacuum, was obtained. CdTe surface chemical treatment results in the removal of native oxides and surface enrichment with elemental tellurium. Heating in vacuum leads to the tellurium desorption and the appearance of a Te-stabilized CdTe surface. During heating in vacuum, two stages of surface state change are observed (~125°С and ≤250°С). At Т>250°С, elemental tellurium is desorbed and a Te-stabilized structure (1x1) CdTe(013) is formed.

Corrosion Behavior of Zinc Covered with Native Oxides Under Thin Solution Films

This study clarified the influence of native oxides on the atmospheric corrosion of Zn. The electrochemical impedance spectroscopy (EIS) values of native-oxide-covered Zn were measured under thin solution films of 10 μm to 500 μm in thickness. The native oxides were formed by exposing pure Zn plates to humidified air at two different temperatures, 25°C and 60°C, for the duration of one week. EIS was applied to the native-oxide-covered Zn for measurement under thin solution films; the results were analyzed using a transmission line equivalent circuit to determine the charge-transfer resistance (Rct). The native oxide formed at 25°C strongly suppressed the corrosion rate (1/Rct) of Zn, which was independent of the solution film thickness (Xf). However, the 1/Rct was not reduced by the native oxides formed at 60°C, as it was dependent on Xf. This paper discusses the different behaviors of the native oxides in the context of corrosion protection.