Electronic structure and magnetic properties of the cubic Laves-phase intermetallic compounds

1986 ◽  
Vol 54-57 ◽  
pp. 961-962 ◽  
Author(s):  
H. Yamada ◽  
J. Inoue ◽  
M. Shimizu
2003 ◽  
Vol 801 ◽  
Author(s):  
D.J. Singh ◽  
M. Gupta

ABSTRACTYFe2H4 is a ferromagnetic metal with magnetization higher than the Laves phase parent compound, YFe2. Here, the electronic and magnetic properties of YFe2H4 are studied using density functional calculations, in order to elucidate the reasons for this. The electronic structure of YFe2H4 differs from that of YFe2 both because of the lattice expansion upon hydriding and because of chemical interactions involving H. However, the main reason for the increased magnetization is found to be the lattice expansion.


1973 ◽  
Vol 8 (5) ◽  
pp. 1901-1911 ◽  
Author(s):  
J. Gal ◽  
Z. Hadari ◽  
U. Atzmony ◽  
E. R. Bauminger ◽  
I. Nowik ◽  
...  

Metals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1296
Author(s):  
Roman D. Mukhachev ◽  
Alexey V. Lukoyanov

Magnetic intermetallic compounds based on rare earth elements and 3d transition metals are widely investigated due to the functionality of their physical properties and their variety of possible applications. In this work, we investigated the features of the electronic structure and magnetic properties of ternary intermetallic compounds based on gadolinium GdMn1-xTixSi, in the framework of the DFT + U method. Analysis of the densities of electronic states and magnetic moments of ions in Ti-doped GdMnSi showed a significant change in the magnetic properties depending on the contents of Mn and Ti. Together with the magnetic moment, an increase in the density of electronic states at the Fermi energy was found in almost all GdMn1-xTixSi compositions, which may indicate a significant change in the transport properties of intermetallic compounds. Together with the expected Curie temperatures above 300 K, the revealed changes in the magnetic characteristics and electronic structure make the GdMn1-xTixSi intermetallic system promising for use in microelectronic applications.


1989 ◽  
Vol 40 (14) ◽  
pp. 9519-9528 ◽  
Author(s):  
Olle Eriksson ◽  
Börje Johansson ◽  
M. S. S. Brooks ◽  
H. L. Skriver

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