scholarly journals Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

2021 ◽  
Vol 5 ◽  
pp. 100102
Author(s):  
Eero Haimi ◽  
Oili M.E. Ylivaara ◽  
Jihong Yim ◽  
Riikka L. Puurunen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
X Ray ◽  
High Aspect Ratio Structure ◽  
Deposited Film ◽  
Saturation Profile

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

scholarly journals Towards sub-micrometer high aspect ratio X-ray gratings by atomic layer deposition of iridium

2018 ◽  
Vol 192 ◽  
pp. 19-24 ◽  
Author(s):  
Joan Vila-Comamala ◽  
Lucia Romano ◽  
Vitaliy Guzenko ◽  
Matias Kagias ◽  
Marco Stampanoni ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

High-aspect-ratio structure formation in x-ray lithography

2000 ◽  
Author(s):  
Vladimir A. Kudryashov ◽  
Sing Lee
Keyword(s):  
Aspect Ratio ◽  
Structure Formation ◽  
High Aspect Ratio ◽  
X Ray ◽  
High Aspect Ratio Structure

Tunable Atomic Layer Deposition into Ultra-High-Aspect-Ratio (>60000:1) Aerogel Monoliths Enabled by Transport Modeling

2021 ◽  
Author(s):  
Andrew J. Gayle ◽  
Zachary J. Berquist ◽  
Yuxin Chen ◽  
Alexander J. Hill ◽  
Jacob Y. Hoffman ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Transport Modeling ◽  
Layer Deposition

Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches

2017 ◽  
Vol 146 (5) ◽  
pp. 052818 ◽  
Author(s):  
I. J. M. Erkens ◽  
M. A. Verheijen ◽  
H. C. M. Knoops ◽  
W. Keuning ◽  
F. Roozeboom ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Pt Films

New hybrid (e‐beam/x‐ray) exposure technique for high aspect ratio microstructure fabrication

1979 ◽  
Vol 16 (6) ◽  
pp. 1631-1634 ◽  
Author(s):  
M. Hatzakis ◽  
D. Hofer ◽  
T. H. P. Chang
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
X Ray ◽  
Microstructure Fabrication ◽  
High Aspect Ratio Microstructure ◽  
Exposure Technique
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