Reduction of Surface Residual Lithium Compounds for Single-Crystal LiNi0.6Mn0.2Co0.2O2 via Al2O3 Atomic Layer Deposition and Post-Annealing

Surface residual lithium compounds of Ni-rich cathodes are tremendous obstacles to electrochemical performance due to blocking ion/electron transfer and arousing surface instability. Herein, ultrathin and uniform Al2O3 coating via atomic layer deposition (ALD) coupled with the post-annealing process is reported to reduce residual lithium compounds on single-crystal LiNi0.6Mn0.2Co0.2O2 (NCM622). Surface composition characterizations indicate that LiOH is obviously reduced after Al2O3 growth on NCM622. Subsequent post-annealing treatment causes the consumption of Li2CO3 along with the diffusion of Al atoms into the surface layer of NCM622. The NCM622 modified by Al2O3 coating and post-annealing exhibits excellent cycling stability, the capacity retention of which reaches 92.2% after 300 cycles at 1 C, much higher than that of pristine NCM622 (34.8%). Reduced residual lithium compounds on NCM622 can greatly decrease the formation of LiF and the degree of Li+/Ni2+ cation mixing after discharge–charge cycling, which is the key to the improvement of cycling stability.

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.

Plasma Enhanced Atomic Layer Deposition of Nickel and Cobalt Phosphate for Lithium Ion Batteries

A plasma-enhanced ALD process has been developed to deposit nickel phosphate. The process combines a trimethylphosphate (TMP) plasma with an oxygen plasma and nickelocene at a substrate temperature of 300°C....