Depth profiling of taxol-loaded poly(styrene-b-isobutylene-b-styrene) using Ga+ and C60+ ion beams

2006 ◽  
Vol 252 (19) ◽  
pp. 6615-6618 ◽  
Author(s):  
R.M. Braun ◽  
J. Cheng ◽  
E.E. Parsonage ◽  
J. Moeller ◽  
N. Winograd
Keyword(s):  
Depth Profiling ◽  
Ion Beams

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

ToF-SIMS depth profiling of vitamin C layers using Cs+ and Xe+ ion beams

2010 ◽  
Vol 43 (1-2) ◽  
pp. 190-193 ◽  
Author(s):  
Nimer Wehbe ◽  
Laurent Houssiau
Keyword(s):  
Vitamin C ◽  
Depth Profiling ◽  
Ion Beams ◽  
Tof Sims ◽  
Sims Depth Profiling

Two Methods Using Ion Beams for Detecting and Depth Profiling Light Impurities in Materials

1976 ◽  
pp. 295-307 ◽  
Author(s):  
B. TERREAULT ◽  
M. LEROUX ◽  
J. G. MARTEL ◽  
R. ST-JACQUES ◽  
C. BRASSARD ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Ion Beams ◽  
Light Impurities

Depth profiling of polymer samples using Ga+ and C60 + ion beams

2008 ◽  
Vol 41 (1) ◽  
pp. 6-10 ◽  
Author(s):  
N. Nieuwjaer ◽  
C. Poleunis ◽  
A. Delcorte ◽  
P. Bertrand
Keyword(s):  
Depth Profiling ◽  
Ion Beams

scholarly journals Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (10) ◽  
pp. 664-669
Author(s):  
Toshiya OGIWARA ◽  
Takaharu NAGATOMI ◽  
Kyung Joong KIM ◽  
Shigeo TANUMA
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Specimen Holder ◽  
High Depth

The effect of incident energy on molecular depth profiling of polymers with large Ar cluster ion beams

2010 ◽  
Vol 43 (1-2) ◽  
pp. 221-224 ◽  
Author(s):  
Satoshi Ninomiya ◽  
Kazuya Ichiki ◽  
Hideaki Yamada ◽  
Yoshihiko Nakata ◽  
Toshio Seki ◽  
...  
Keyword(s):  
Incident Energy ◽  
Depth Profiling ◽  
Ion Beams ◽  
Molecular Depth Profiling ◽  
Cluster Ion Beams ◽  
Cluster Ion

Molecular Depth Profiling with Argon Gas Cluster Ion Beams

2015 ◽  
Vol 119 (27) ◽  
pp. 15316-15324 ◽  
Author(s):  
Kan Shen ◽  
Andreas Wucher ◽  
Nicholas Winograd
Keyword(s):  
Depth Profiling ◽  
Ion Beams ◽  
Argon Gas ◽  
Molecular Depth Profiling ◽  
Cluster Ion Beams ◽  
Cluster Ion

XPS sputter depth profiling of the chemical states for SrTiO3/Si interface by O2+ ion beams

1995 ◽  
Vol 23 (13) ◽  
pp. 851-857 ◽  
Author(s):  
K. J. Kim ◽  
D. W. Moon ◽  
S. H. Nam ◽  
W. J. Lee ◽  
H. G. Kim
Keyword(s):  
Depth Profiling ◽  
Ion Beams ◽  
Chemical States
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