High tunability in (1 1 0)-oriented BaZr0.2Ti0.8O3 (BTZ) lead-free thin films fabricated by pulsed laser deposition

2018 ◽  
Vol 44 (3) ◽  
pp. 3005-3008 ◽  
Author(s):  
Shihui Yu ◽  
Rongchuang Liu ◽  
Leijiao Ge ◽  
Le Zhao ◽  
Lingxia Li ◽  
...  
2013 ◽  
Vol 278 ◽  
pp. 162-165 ◽  
Author(s):  
A. Andrei ◽  
N.D. Scarisoreanu ◽  
R. Birjega ◽  
M. Dinescu ◽  
G. Stanciu ◽  
...  

2016 ◽  
Vol 164 ◽  
pp. 413-416 ◽  
Author(s):  
Minh D. Nguyen ◽  
Matthijn Dekkers ◽  
Evert P. Houwman ◽  
Hien T. Vu ◽  
Hung N. Vu ◽  
...  

2012 ◽  
Vol 1454 ◽  
pp. 183-188 ◽  
Author(s):  
Krishnaprasad Sasi ◽  
Sebastian Mailadil ◽  
Fredy Rojas ◽  
Aldrin Antony ◽  
Jayaraj Madambi

ABSTRACTBi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.


2008 ◽  
Vol 517 (2) ◽  
pp. 592-597 ◽  
Author(s):  
J.-R. Duclère ◽  
C. Cibert ◽  
A. Boulle ◽  
V. Dorcet ◽  
P. Marchet ◽  
...  

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