Metal–Dielectric Polarization-Preserving Anisotropic Mirror for Chiral Optical Tamm State

This numerical study demonstrates the possibility of exciting a chiral optical Tamm state localized at the interface between a cholesteric liquid crystal and a polarization-preserving anisotropic mirror conjugated to a metasurface. The difference of the proposed structure from a fully dielectric one is that the metasurface makes it possible to decrease the number of layers of a polarization-preserving anisotropic mirror by a factor of more than two at the retained Q-factor of the localized state. It is shown that the proposed structure can be used in a vertically emitting laser.

Study of Dielectric, Polarization Properties of Cyclopentanol and Their Solutions in Cyclopentane by a New Variation Method

Results of calculating the theoretical principles of the variational method for measuring the dielectric parameters of polar liquids: cyclopentanol and its solutions in cyclopentane have been shown in the paper. Their dielectric constant ξ' and dielectric losses ξ'' are calculated. Solutions to the equations were found and a graphical solution method and an automated method for calculating ξ' and ξ'' were developed on the basis of this method. Comparison with the results of other methods revealed that these indicators are at the same time minimal within 1.5–2.0%.

Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition

In this work, we systematically investigated the carrier transport of hysteresis-free amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) incorporating high-k (HfO2)x(Al2O3)y gate dielectrics with different composition and permittivity by atomic layer deposition (ALD). A dielectric surface morphology dominated interface scattering carrier transport mechanism is demonstrated, and the effect of the dielectric polarization and the interface states on the carrier mobility is discovered in TFT devices gated by high quality dielectrics with negligible charge trap effect. Accordingly, an a-IGZO TFT gated by (HfO2)0.5(Al2O3)0.5 dielectric with the smoothest surface exhibits the best performance in terms of a preferable field-effect mobility of 18.35 cm2 V-1 s-1, a small subthreshold swing of 0.105 V decade-1, a high on/off current ratio of 4.6× 106, and excellent stability under positive bias stress.

Developing a Phototactic Electrostatic Insect Trap Targeting Whiteflies, Leafminers, and Thrips in Greenhouses

Our aim was to develop an electrostatic apparatus to lure and capture silverleaf whiteflies (Bemisia tabaci), vegetable leafminers (Liriomyza sativae), and western flower thrips (Frankliniella occidentalis) that invade tomato greenhouses. A double-charged dipolar electric field producer (DD-EFP) was constructed by filling water in two identical transparent soft polyvinyl chloride tubes arrayed in parallel with fixed separation, and then, inserting the probes of grounded negative and positive voltage generators into the water of the two tubes to generate negatively and positively charged waters, respectively. These charged waters electrified the outer surfaces of the opposite tubes via dielectric polarization. An electric field formed between the oppositely charged tubes. To lure these phototactic insects, the water was colored yellow using watercolor paste, then introduced into the transparent insulator tubes to construct the yellow-colored DD-EFP. This apparatus lured insects in a manner similar to commercially available yellow sticky traps. The yellow-colored DD-EFP was easily placed as a movable upright screen along the plants, such that invading pests were preferentially attracted to the trap before reaching the plants. Furthermore, pests settling on the plants were attracted to the apparatus, which used a plant-tapping method to drive them off the plants. Our study provided an experimental basis for developing an electrostatic device to attract and capture insects that enter greenhouses.

Flexoelectric nanodomains in rare-earth iron garnet thin films under strain gradient

Flexoelectricity is a universal property associated with dielectric materials, wherein they exhibit remanent polarization induced by strain gradient. Rare-earth iron garnets, R3Fe5O12, are ferrimagnetic insulators with useful magnetic properties. However, they are unlikely to show remanent dielectric polarization because of their centrosymmetric structure. Here, to induce flexoelectricity, we investigate various rare-earth iron-garnet thin films deposited on lattice-mismatched substrates. Atomic-resolution scanning transmission electron microscopy demonstrates the presence of 15 nm-thick strain gradients in Sm3Fe5O12 films between epitaxially strained tetragonal and relaxed cubic structures. Furthermore, negatively polarized nanodomains are imaged by scanning nonlinear dielectric microscopy. It suggests a generation of flexoelectricity, where the polarization points down toward the substrate in the out-of-plane direction. X-ray magnetic circular dichroism demonstrates hysteresis with a large coercive field originating from the strain-gradient layer. We believe that our study will pave the way for achieving dielectric polarization even in nonpolar centrosymmetric materials by strain-gradient engineering.