A new mechanoluminescence phosphor Na3Sc2(PO4)3:Eu2+: Phase transition-assisted defect formation in a polymorphic composition

2020 ◽  
Vol 46 (8) ◽  
pp. 12138-12144 ◽  
Author(s):  
Ha Jun Kim ◽  
Sanjith Unithrattil ◽  
Won Bin Im
1995 ◽  
Vol 396 ◽  
Author(s):  
SH.M. Makhkamov ◽  
S.N. Abdurakhmanova

AbstractStudies of galvanomagnetic and electrical parameters of p- type Si : SiO2 in the temperature range 80 – 400 K have shown that X-ray irradiation at 80 K (Mo Ka,β and braking radiation hvmax. = 50 heV) leads to various transformations of the spectrum of electron- hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si – SiO2 interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO2- phase.


2002 ◽  
Vol 17 (08) ◽  
pp. 1149-1158 ◽  
Author(s):  
A. P. BALACHANDRAN ◽  
S. DIGAL

We extend and generalize the seminal work of Brandenberger, Huang and Zhang on the formation of strings during chiral phase transitions1 and discuss the formation of Abelian and non-Abelian topological strings during such transitions in the early universe and in the high energy heavy-ion collisions. Chiral symmetry as well as deconfinement are restored in the core of these defects. Formation of a dense network of string defects is likely to play an important role in the dynamics following the chiral phase transition. We speculate that such a network can give rise to non-azimuthal distribution of transverse energy in heavy-ion collisions.


2002 ◽  
Vol 17 (01) ◽  
pp. 1-43 ◽  
Author(s):  
ARTTU RAJANTIE

When a symmetry gets spontaneously broken in a phase transition, topological defects are typically formed. The theoretical picture of how this happens in a breakdown of a global symmetry, the Kibble–Zurek mechanism, is well established and has been tested in various condensed matter experiments. However, from the viewpoint of particle physics and cosmology, gauge field theories are more relevant than global theories. In recent years, there have been significant advances in the theory of defect formation in gauge field theories, which make precise predictions possible, and in experimental techniques that can be used to test these predictions in superconductor experiments. This opens up the possibility of carrying out relatively simple and controlled experiments, in which the nonequilibrium phase transition dynamics of gauge field theories can be studied. This will have a significant impact on our understanding of phase transitions in the early universe and in heavy ion collider experiments. In this paper, I review the current status of the theory and the experiments in which it can be tested.


1998 ◽  
Vol 80 (7) ◽  
pp. 1465-1468 ◽  
Author(s):  
V. M. Ruutu ◽  
V. B. Eltsov ◽  
M. Krusius ◽  
Yu. G. Makhlin ◽  
B. Plaçais ◽  
...  

1985 ◽  
Vol 52 ◽  
Author(s):  
E. Myers ◽  
G. A. Rozgonyi ◽  
D. K. Sadana ◽  
W. Maszara ◽  
J. J. Wortman ◽  
...  

ABSTRACTCross-section transmission electron microscopy (X-TEM) has been used to illustrate the amornhous/ crystalline (a/c) micromorphology dependence of various low dose Ge+ preamorphizatlon implants in Si. Ge+ Implants were done at room _emperature at energies of 150 and 300 keV in the dose range of 1 to 9E14 cm−2. These implants result in the formation of either a buried or a continuous amorphous layer, with rough a/c interfaces. Nucleation of spanning “hairpin” dislocations during subsequent solid phase epltaxy (SPE) regrowth is known to be related to rough a/c interface morphology. Very low temperature anneals (VLTA),less than 500°C where the rate of SPE is minimal, were utilized to sharpen rough a/c interfaces prior to subsequent SPE regrowth. Sharpening of rough a/c interfaces is shown to result from an unexpected reverse crystalline to amorphous phase transition. This reverse phase transition results in the dissolution of detached microcrystallltes located within the amorphous layer near the a/c interface. Utilization of VLTA interfacial smoothing prior to SPE regrowth therfore, results in the reduction of residual spanning “hairpin” dislocations along with homogenization of the amorphous material.


1993 ◽  
Vol 70 (6) ◽  
pp. 814-817 ◽  
Author(s):  
J. Crain ◽  
G. J. Ackland ◽  
R. O. Piltz ◽  
P. D. Hatton

2009 ◽  
Vol 87 (6) ◽  
pp. 66003 ◽  
Author(s):  
A. D. Pezzutti ◽  
L. R. Gómez ◽  
M. A. Villar ◽  
D. A. Vega

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