Characterization of substrate off-angle effects for high-quality homoepitaxial CVD diamond films

2008 ◽  
Vol 17 (4-5) ◽  
pp. 435-439 ◽  
Author(s):  
Osamu Maida ◽  
Hidetaka Miyatake ◽  
Tokuyuki Teraji ◽  
Toshimichi Ito
1995 ◽  
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P. Polesello

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Agnieszka Karczmarska ◽  
Barbara Marczewska ◽  
Marta Marszałek

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Thu Nhi Tran Thi ◽  
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V. Chernov ◽  
M. Pedroza-Montero ◽  
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Satoshi Yoshizaki ◽  
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Toshimichi Ito

2004 ◽  
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H. Kanda

1989 ◽  
Vol 162 ◽  
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ABSTRACTCVD diamond films prepared under varying conditions have been investigated with IR and Raman spectroscopy. Raman spectroscopy was used to characterize the crystal structure, and ir absorption was used to determine the H bonding environments. The growth temperatures were varied in one series, while the CH4/H2 ratio was varied in another. The IR absorption of all the samples showed a weak broad band extending from approximately 2800 to 2970 cm−1 which was attributed to H bonded to sp3 C sites. There was no evidence of ir absorption at 3000 to 3200 cm−1 which would indicate H bonded to sp2 or sp1 C sites. For both series, the Raman measurements showed progression from diamond-like films to diamond films. The ir absorption showed a general trend of less H with more well ordered diamond structures. No sharp transition of the H incorporation vs the growth parameters was observed.


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