scholarly journals Fabrication and characterization of hydrogenated amorphous silicon films, CVD diamond films, and their devices

1994 ◽  
Author(s):  
Hao Jia
Keyword(s):  
Amorphous Silicon ◽  
Diamond Films ◽  
Hydrogenated Amorphous Silicon ◽  
Cvd Diamond ◽  
Silicon Films ◽  
Fabrication And Characterization ◽  
Hydrogenated Amorphous

Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

2001 ◽  
Vol 664 ◽  
Author(s):  
Wolfhard Beyer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Rare Gas ◽  
Rare Gases ◽  
Boron Doped ◽  
Rare Gas Atoms ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTThe effusion of the rare gases neon and helium, as well as of hydrogen, was studied for plasma deposited (boron-doped and undoped) hydrogenated amorphous silicon films, grown at various substrate temperatures. Rare gas atoms were incorporated into the material during the growth process or by ion implantation. The results suggest that helium and neon effusion spectra give information on the material microstructure.

Microstructure Characterization of Amorphous Silicon Films by Effusion Measurements of Implanted Helium

2013 ◽  
Vol 1536 ◽  
pp. 175-180 ◽  
Author(s):  
W. Beyer ◽  
W. Hilgers ◽  
D. Lennartz ◽  
F.C. Maier ◽  
N.H. Nickel ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Low Temperatures ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Common Features ◽  
Hydrogenated Amorphous

ABSTRACTAn important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several series of hydrogenated and unhydrogenated amorphous silicon films prepared by the methods of plasma deposition, hot wire deposition and vacuum evaporation were investigated. The results show common features like a He effusion peak at low temperatures attributed to He out-diffusion through a compact material or through interconnected voids, and a He effusion peak at high temperatures attributed to He trapped in isolated voids. While undoped plasma-grown device-grade hydrogenated amorphous silicon (a-Si:H) films show a rather low concentration of such isolated voids, its concentration can be rather high in doped a-Si:H, in unhydrogenated evaporated material and others.

Characterization of hydrogenated amorphous silicon films obtained from rice husk

1991 ◽  
Vol 79 (8) ◽  
pp. 687-691 ◽  
Author(s):  
K.C. Nandi ◽  
D. Mukherjee ◽  
A.K. Biswas ◽  
H.N. Acharya
Keyword(s):  
Amorphous Silicon ◽  
Rice Husk ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous
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