Tailoring electronic properties and Schottky barrier in sandwich heterostructure based on graphene and tungsten diselenide

2019 ◽  
Vol 94 ◽  
pp. 129-136 ◽  
Author(s):  
P.T.T. Le ◽  
Le M. Bui ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
B. Amin ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
Tungsten Diselenide ◽  
And Tungsten

Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain

2018 ◽  
Vol 113 (17) ◽  
pp. 171605 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
I. A. Fedorov ◽  
C. A. Duque ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
Van Der Waals ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Tuning the Schottky barrier height in a multiferroic In2Se3/Fe3GeTe2 van der Waals heterojunction

Nanoscale ◽  
2021 ◽  
Author(s):  
Maria Javaid ◽  
Patrick David Taylor ◽  
Sherif Abdulkader Tawfik ◽  
Michelle Jeanette Sapountzis Spencer
Keyword(s):  
Density Functional Theory ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Density Functional ◽  
Schottky Barrier Height ◽  
Van Der Waals ◽  
Ferroelectric Material ◽  
Functional Theory ◽  
Significant Interest

The ferroelectric material In2Se3 is currently of significant interest due to its built-in polarisation characteristics that can significantly modulate its electronic properties. Here we employ density functional theory to determine...

scholarly journals Photosensitive Schottky barrier diode behavior of a semiconducting Co(iii)–Na complex with a compartmental Schiff base ligand

RSC Advances ◽  
2019 ◽  
Vol 9 (60) ◽  
pp. 34710-34719 ◽  
Author(s):  
Kousik Ghosh ◽  
Sayantan Sil ◽  
Partha Pratim Ray ◽  
Joaquín Ortega-Castro ◽  
Antonio Frontera ◽  
...  
Keyword(s):  
Schiff Base ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Theoretical Investigation ◽  
Schiff Base Ligand ◽  
Schottky Barrier Diode ◽  
Sodium Complex ◽  
Diode Behavior ◽  
Schottky Device

The opto-electronic properties of a cobalt(iii)–sodium complex have been studied with the help of both experimental and theoretical investigation. The complex has also been used to fabricate an effective photosensitive Schottky device.

The Electronic Properties of Silicon-Silicide Epitaxial Interfaces

1987 ◽  
Vol 102 ◽  
Author(s):  
Stefano Ossicini ◽  
O. Bisi
Keyword(s):  
Detailed Analysis ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Electronic States ◽  
Type A ◽  
Type B ◽  
Barrier Heights ◽  
Densities Of States

ABSTRACTThe selfconsistent electronic properties of the epitaxial Si(111)-NiSi2 interface are computed for the experimentally observed type-A and type-B growth orientations. The densities of states projected on the various sites provide a detailed analysis of the siliconsilicide interface electronic states. The measured Schottky barrier heights may be interpreted by assuming that deviations from epitaxy must be taken into account.

The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti

2017 ◽  
Vol 164 (9) ◽  
pp. C516-C525 ◽  
Author(s):  
F. Di Quarto ◽  
F. Di Franco ◽  
S. Miraghaei ◽  
M. Santamaria ◽  
F. La Mantia
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
Amorphous Semiconductor ◽  
Anodic Films

Study of Grains and Boundaries of Molybdenum Diselenide and Tungsten Diselenide Using Liquid Crystal

Nano Letters ◽  
2017 ◽  
Vol 17 (3) ◽  
pp. 1474-1481 ◽  
Author(s):  
Muhammad Arslan Shehzad ◽  
Sajjad Hussain ◽  
Junsu Lee ◽  
Jongwan Jung ◽  
Naesung Lee ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Tungsten Diselenide ◽  
Molybdenum Diselenide ◽  
And Tungsten
Sign in / Sign up

Export Citation Format

Share Document