A novel semi-analytical algorithm of nearly singular integrals on higher order elements in two dimensional BEM

2015 ◽  
Vol 61 ◽  
pp. 42-51 ◽  
Author(s):  
Zhongrong Niu ◽  
Zongjun Hu ◽  
Changzheng Cheng ◽  
Huanlin Zhou
Keyword(s):  
Singular Integrals ◽  
Higher Order ◽  
Two Dimensional ◽  
Analytical Algorithm ◽  
Nearly Singular Integrals

Analytic formulations for calculating nearly singular integrals in two-dimensional BEM

2007 ◽  
Vol 31 (12) ◽  
pp. 949-964 ◽  
Author(s):  
Zhongrong Niu ◽  
Changzheng Cheng ◽  
Huanlin Zhou ◽  
Zongjun Hu
Keyword(s):  
Singular Integrals ◽  
Two Dimensional ◽  
Nearly Singular Integrals

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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