Study of melt convection and interface shape during sapphire crystal growth by Czochralski method

2012 ◽  
Vol 55 (25-26) ◽  
pp. 8003-8009 ◽  
Author(s):  
Haisheng Fang ◽  
Jun Tian ◽  
Quanjiang Zhang ◽  
Yaoyu Pan ◽  
Sen Wang
Keyword(s):  
Crystal Growth ◽  
Czochralski Method ◽  
Sapphire Crystal ◽  
Interface Shape ◽  
Melt Convection

Large modification of crystal–melt interface shape during Si crystal growth by using electromagnetic Czochralski method (EMCZ)

2006 ◽  
Vol 292 (2) ◽  
pp. 252-256 ◽  
Author(s):  
Masahito Watanabe ◽  
Daniel Vizman ◽  
Jochen Friedrich ◽  
Georg Müller
Keyword(s):  
Crystal Growth ◽  
Czochralski Method ◽  
Interface Shape

Characteristics of melt convection during Kyropoulos sapphire crystal growth

2014 ◽  
Vol 105 (10) ◽  
pp. 961-967
Author(s):  
HaiSheng Fang ◽  
Zhi Zhang ◽  
ZeLin Jin ◽  
Sen Wang ◽  
JianFeng Xu
Keyword(s):  
Crystal Growth ◽  
Sapphire Crystal ◽  
Melt Convection

Role of Internal Radiation With or Without Melt Inclusions During Czochralski Sapphire Crystal Growth

2013 ◽  
Author(s):  
H. S. Fang ◽  
Q. J. Zhang ◽  
L. L. Zheng ◽  
M. J. Zhang ◽  
J. Tian
Keyword(s):  
Crystal Growth ◽  
Melt Inclusions ◽  
Light Emitting Diode ◽  
Coupled Model ◽  
Discrete Ordinates ◽  
Sapphire Crystal ◽  
Interface Shape ◽  
Internal Radiation

Sapphire is the most popular substrate material for GaN thin-film crystal growth during the Light-emitting diode (LED) fabrication. The performance of GaN films is directly influenced by the quality of the substrates. The control of the growth front, i.e., solid /liquid interface, is critical to improve the quality of the sapphire. As a semi-transparent material, sapphire has an intermediate optical thickness, which requires considering of internal radiation for an accurate prediction of temperature field and interface shape. In the paper, a coupled model has been applied on the modeling of transport phenomena during the Czochralski (Cz) sapphire growth. Especially, the role of the internal radiation with or without melt inclusions has been examined carefully by Discrete Ordinates (DO) method. The interface convexity is influenced by the parameters of the models as well as by the melt inclusions. By setting the different optical properties at the inclusion regions, as observed in the experiments, the entrapment of gas or solid inclusions inside the crystal and its effect on the interface shape are examined.

LIQUID–SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD

1960 ◽  
Vol 38 (3) ◽  
pp. 439-443 ◽  
Author(s):  
W. D. Edwards
Keyword(s):  
Crystal Growth ◽  
Czochralski Method ◽  
Interface Shape ◽  
Solid Interface ◽  
Silicon Crystals ◽  
Macroscopic Structure

A study has been made of the macroscopic structure of the liquid–solid interface which exists during growth of silicon crystals by the Czochralski method. In two crystals the interface was seen to contain a (111) facet. The development of such facets is discussed with reference to current crystal growth theories.

Study on crystal-melt interface shape of sapphire crystal growth by the KY method

2015 ◽  
Vol 431 ◽  
pp. 15-23 ◽  
Author(s):  
Weina Liu ◽  
Jijun Lu ◽  
Hongjian Chen ◽  
Wenbo Yan ◽  
Chunhua Min ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Sapphire Crystal ◽  
Interface Shape
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