Controlling asymmetric transmission phase in planar chiral metasurfaces

Metasurfaces with ultrathin artificial structures have attracted much attention because of their unprecedented capability in light manipulations. The recent development of metasurfaces with controllable responses opens up new opportunities in various applications. Moreover, metasurfaces composed of twisted chiral structures can generate asymmetric responses for opposite incidence, leading to more degrees of freedom in wave detections and controls. However, most past studies had focused on the amplitude responses, not to mention using bi-directional phase responses, in the characterization and light manipulation of chiral metasurfaces. Here, we report a birefringent interference approach to achieve a controllable asymmetric bi-directional transmission phase from planar chiral metasurface by tuning the orientation of the metasurface with respect to the optical axis of an add-on birefringent substrate. To demonstrate our approach, we fabricate planar Au sawtooth nanoarray metasurface and measure the asymmetric transmission phase of the metasurface placed on a birefringent sapphire crystal slab. The Au sawtooth metasurface-sapphire system exhibits large oscillatory behavior for the asymmetric transmission phase with the tuning parameter. We confirm our experimental results by Jones matrix calculations using data obtained from full-wave simulations for the metasurface. Our approach in the characterization and light manipulation of metasurfaces with controllable responses is simple and nondestructive, enabling new functionalities and potential applications in optical communication, imaging, and remote sensing.

Fluorescence quantum efficiency of Ti3+:Al2O3 at cryogenic temperatures and excitation by laser diodes

In this work the temperature dependences of the fluorescence of a titanium-sapphire crystal excited by radiation with λ=507 nm, λ=454 nm and λ=405 nm are measured. The quantum efficiency of fluorescence is determined. It was found for the first time that the quantum efficiency of fluorescence exceeds 100% in the cryogenic temperature range when the crystal is excited by radiation with λ = 454 nm. It is equal to (117 ± 5) % and (114 ± 5) % at T = 77 K for crystals grown by the Czochralski method and by gradient of temperature one, respectively.

Stability Analysis of Thermocapillary Convection of B2O3/Sapphire Melt in an Annular Pool

Aiming at the thermocapillary convection stability of sapphire crystal grown by liquid-encapsulated Czochralski method, by non-linear numerical simulation, obtained the flow function and temperature distribution of R-Z cross section, as well as the velocity and temperature distribution at liquid-liquid interface and monitoring point of B2O3/sapphire melt in annular two liquid system, covered with solid upper wall and in microgravity. By means of linear stability analysis, obtained the neutral stability curve and critical stability parameters of the system, and revealed the temperature fluctuation of the liquid-liquid interface. The calculated results of B2O3/sapphire melt were compared with 5cSt silicone oil/HT-70. The results show that under the same geometrical conditions, the flow of B2O3/sapphire melt system is more unstable than 5cSt silicone oil/HT-70, there are two unstable flow patterns, radial three-dimensional steady flow cell and hydrothermal waves near the hot wall. The larger the ratio of Pr number of upper and lower fluid layers is, the better the effect of restraining the flow of lower fluid layers is.

Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire

Ultrawide-bandgap semiconductors are ushering in the next generation of high-power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here, it is found that single-crystalline layers of α-(AlGa)2O3 alloys spanning bandgaps of 5.4 to 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the α- to the narrower bandgap β-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a broad range, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.

Segment Matrix Design and Drilling Test of Diamond Bit for Sapphire

This paper introduces the characteristics of sapphire and sapphire digging bits in LED field. The segment matrix design principle of bit and the rule of diamond selection are put forward. In addition, this paper analyzes the function of different metal powders and diamond parameters in the segment matrix. The results show that the finer grained (for example 80/100 mesh) diamond should be used with the concentrations of 30-60%. In the segment matrix, tin element can make the matrix more brittle and then the bit is sharper. Copper, silver and nickel element can enhance the matrix toughness and strength, cobalt and tungsten element can increase abrasive resistance. All of the above designs enable the sapphire bit to high sharpness and long life. A 4-inch sapphire bit was prepared for drilling sapphire crystal, the efficiency is increased by 8% than the Taiwan drill bit with the same specifications, the life is equal to Taiwan's drill bit, and the defect rate of sapphire bar is less than 0.5%, which satisfies the requirement of customers.