Numerical simulation of crystal growth: Influence of melt convection on global heat transfer and interface shape

1990 ◽  
Vol 99 (1-4) ◽  
pp. 702-706 ◽  
Author(s):  
Y. Ryckmans ◽  
P. Nicodéme ◽  
F. Dupret
Keyword(s):  
Heat Transfer ◽  
Numerical Simulation ◽  
Crystal Growth ◽  
Interface Shape ◽  
Melt Convection

Optimization of Bulk Hgcdte Growth in a Directional Solidification Furnace by Numerical Simulation

1995 ◽  
Vol 398 ◽  
Author(s):  
A.V. Bune ◽  
D.C. Gillies ◽  
S.L. Lehoczky
Keyword(s):  
Heat Transfer ◽  
Numerical Simulation ◽  
Finite Element ◽  
Crystal Growth ◽  
Numerical Model ◽  
Directional Solidification ◽  
Growth Conditions ◽  
Finite Element Code ◽  
Interface Shape ◽  
Solidification Furnace

ABSTRACTA numerical model of heat transfer by combined conduction, radiation and convection was developed using the FIDAP finite element code for NASA's Advanced Automated Directional Solidification Furnace (AADSF). The prediction of the temperature gradient in an ampoule with HgCdTe is a necessity for the evaluation of whether or not the temperature set points for furnace heaters and the details of cartridge design ensure optimal crystal growth conditions for this material and size of crystal. A prediction of crystal/melt interface shape and the flow patterns in HgCdTe are available using a separate complementary model.

Experiment and numerical simulation of melt convection and oxygen distribution in 400-mm Czochralski silicon crystal growth

Rare Metals ◽  
2017 ◽  
Vol 36 (2) ◽  
pp. 134-141 ◽  
Author(s):  
Ran Teng ◽  
Yang Li ◽  
Bin Cui ◽  
Qing Chang ◽  
Qing-Hua Xiao ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Oxygen Distribution ◽  
Czochralski Silicon ◽  
Melt Convection

Study of melt convection and interface shape during sapphire crystal growth by Czochralski method

2012 ◽  
Vol 55 (25-26) ◽  
pp. 8003-8009 ◽  
Author(s):  
Haisheng Fang ◽  
Jun Tian ◽  
Quanjiang Zhang ◽  
Yaoyu Pan ◽  
Sen Wang
Keyword(s):  
Crystal Growth ◽  
Czochralski Method ◽  
Sapphire Crystal ◽  
Interface Shape ◽  
Melt Convection

scholarly journals Numerical simulation of temperature field in the vertical Bridgman method crystal growth

10.30544/130 ◽  
2015 ◽  
Vol 21 (1) ◽  
pp. 25-34
Author(s):  
Srdjan Perišić ◽  
Ahmed Ali Awhida ◽  
Vesna Radojević ◽  
Dejan Davidović ◽  
Dejan Trifunović ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Numerical Simulation ◽  
Mathematical Model ◽  
Crystal Growth ◽  
Numerical Data ◽  
Sufficient Accuracy ◽  
The Finite Element Method ◽  
Growth Regime ◽  
Vertical Bridgman ◽  
The Mathematical Model

The mathematical model for heat transfer during the Bridgeman crystal growth, using the finite element method and the obtained result аre presented. Some modifications to the method were introduced in order to incorporate the data obtained experimentally. Solving the model enabled comparison of the experimental and numerical data and to obtain sufficient accuracy. The model was used to calculate the temperature gradient in the sample and the calculated gradient was in accordance with the observed crystal growth regime.

scholarly journals Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Zaoyang Li ◽  
Lijun Liu ◽  
Yunfeng Zhang ◽  
Genshu Zhou
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Crystal Growth ◽  
Directional Solidification ◽  
Silicon Crystal ◽  
Solidification Process ◽  
Interface Shape ◽  
Directional Solidification Process ◽  
Reasonable Range ◽  
Crystal Interface

We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

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