Buffer layer replacement: A method for increasing the conversion efficiency of CIGS thin film solar cells

Optik ◽  
2017 ◽  
Vol 136 ◽  
pp. 222-227 ◽  
Author(s):  
M. Moradi ◽  
R. Teimouri ◽  
M. Saadat ◽  
M. Zahedifar
2017 ◽  
Vol 204 ◽  
pp. 53-56 ◽  
Author(s):  
Zhangbo Lu ◽  
Ranran Jin ◽  
Ya Liu ◽  
Longfei Guo ◽  
Xinsheng Liu ◽  
...  

2014 ◽  
Vol 26 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Wolfram Witte ◽  
Stefanie Spiering ◽  
Dimitrios Hariskos

2011 ◽  
Vol 685 ◽  
pp. 60-64 ◽  
Author(s):  
Shui Yang Lien ◽  
Meng Jia Yang ◽  
Yang Shih Lin ◽  
Chia Fu Chen ◽  
Po Hung Lin ◽  
...  

It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Vocand FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57% (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68%) of the amorphous silicon thin film solar cell was achieved.


1996 ◽  
Vol 426 ◽  
Author(s):  
M. Konagai ◽  
Y. Ohtake ◽  
T. Okamoto

AbstractCu(InGa)Se2(CIGS) thin film absorbers were fabricated by a three-stage method using a coevaporation apparatus. As a Cd-free buffer layer, ZnSe, InxSe, GaxSey and ZnInxSey buffer layers have been deposited on the CIGS absorber continuously in the same apparatus. Atomic layer deposition (ALD) was employed as a growth technique for ZnSe. This technique offers a good thickness control as well as a good surface coverage. By irradiating with a solar simulator, all the solar cell parameters increased drastically for the first 50 minutes of the irradiation and then saturated at longer irradiation times. This phenomenon did not appear for the cells with a CdS buffer layer. The best efficiency of ZnO/ZnSe/CIGS thin film solar cells with about 10 nm thick ZnSe buffer layer was 11.6%. On the other hand, ZnO/InxSey/CIGS thin film solar cells showed very stable characteristics under the light illumination, and initial measurements show an efficiency of 13.0%.


2017 ◽  
Vol 38 (8) ◽  
pp. 084006 ◽  
Author(s):  
Kang Luo ◽  
Yulin Sun ◽  
Liyu Zhou ◽  
Fang Wang ◽  
Fang Wu

2014 ◽  
Vol 28 (17) ◽  
pp. 1450106 ◽  
Author(s):  
Won-Ho Son ◽  
Si-Hun Lee ◽  
Sie-Young Choi

This article shows the characteristics on a - SiGe:H based solar cells with various structures. Based on these results, we proposed the a - SiC:H / a - SiGe:H hetero-junction thin film solar cells with a - Si:H buffer layer at the p/i interface to improve the performance of pin-type a - SiGe:H based solar cell. All films of amorphous materials were deposited by 13.56 MHz PECVD method. The effects of deposited parameters on the characteristics of a - SiC:H and a - SiGe:H films have been investigated by ultraviolet–visible–near infrared (UV–VIS–NIR) spectrophotometer. The various values of V oc , J sc , FF and η were measured under 100 mW/cm2 (AM 1.5) solar simulator irradiation. In the proposed structure, we achieved a higher conversion efficiency than general a - SiGe:H solar cell and a - SiC:H / a - SiGe:H hetero-junction thin film solar cells without a - Si:H buffer layer at the p/i interface. Based on results obtained from this study, we discuss the roles of a - Si:H buffer layer in a - SiC:H / a - SiGe:H hetero-junction thin film solar cells.


2021 ◽  
Vol 222 ◽  
pp. 110917
Author(s):  
Shiqing Cheng ◽  
Kaizhi Zhang ◽  
Yunxiang Zhang ◽  
Zhichao He ◽  
Baolai Liang ◽  
...  

2021 ◽  
Vol 112 ◽  
pp. 110666
Author(s):  
Shuaihui Sun ◽  
Jie Guo ◽  
Ruiting Hao ◽  
Abuduwayiti Aierken ◽  
Bin Liu ◽  
...  

2018 ◽  
Vol 676 (1) ◽  
pp. 131-140 ◽  
Author(s):  
Won Ho Son ◽  
Si-Hun Lee ◽  
Jae Keon Kim ◽  
Sie Young Choi ◽  
Seong Ho Kong ◽  
...  

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