Characteristics of a-SiC:H/a-SiGe:H hetero-junction thin film solar cells with and without a-Si:H buffer layer at the p/i interface

2014 ◽  
Vol 28 (17) ◽  
pp. 1450106 ◽  
Author(s):  
Won-Ho Son ◽  
Si-Hun Lee ◽  
Sie-Young Choi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Amorphous Materials ◽  
Near Infrared ◽  
Type A ◽  
Thin Film Solar Cells ◽  
Solar Simulator

This article shows the characteristics on a - SiGe:H based solar cells with various structures. Based on these results, we proposed the a - SiC:H / a - SiGe:H hetero-junction thin film solar cells with a - Si:H buffer layer at the p/i interface to improve the performance of pin-type a - SiGe:H based solar cell. All films of amorphous materials were deposited by 13.56 MHz PECVD method. The effects of deposited parameters on the characteristics of a - SiC:H and a - SiGe:H films have been investigated by ultraviolet–visible–near infrared (UV–VIS–NIR) spectrophotometer. The various values of V oc , J sc , FF and η were measured under 100 mW/cm2 (AM 1.5) solar simulator irradiation. In the proposed structure, we achieved a higher conversion efficiency than general a - SiGe:H solar cell and a - SiC:H / a - SiGe:H hetero-junction thin film solar cells without a - Si:H buffer layer at the p/i interface. Based on results obtained from this study, we discuss the roles of a - Si:H buffer layer in a - SiC:H / a - SiGe:H hetero-junction thin film solar cells.

Hydrogenated amorphous silicon thin film solar cell with buffer layer of DNA-CTMA biopolymer

2014 ◽  
Vol 28 (13) ◽  
pp. 1450107 ◽  
Author(s):  
Won-Ho Son ◽  
M. Siva Pratap Reddy ◽  
Sie-Young Choi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Amorphous Materials ◽  
Simple Structure ◽  
Type A ◽  
Silicon Thin Film ◽  
Solar Simulator ◽  
Hydrogenated Amorphous

The characteristics of nip-type a- Si : H thin film solar cells based on DNA-CTMA biopolymer was investigated. The DNA-CTMA was used as the buffer layer in nip-type a- Si : H solar cell. The E opt of the DNA-CTMA biopolymer was measured with UV-VIS spectrometer. The E opt of DNA-CTMA was determined as 3.96 eV by the plot of (Ahν)2 versus hν. All films of amorphous materials were deposited by PECVD method. The solar cell with a simple structure of glass/ITO/n-a- Si : H /i-a- Si : H /p-a- Si : H /DNA-CTMA/ Al was fabricated. The various values of V oc , J sc , FF , and conversion efficiency η were measured under 100 mW/cm2 (AM 1.5) solar simulator irradiation. Consequently, the resulting in solar cell showed an enhancement in conversion efficiency η compared to conventional nip-type a- Si : H solar cell without buffer layer of DNA-CTMA biopolymer.

Graded Buffer Layer Effect on Performance of the Amorphous Silicon Thin Film Solar Cells

2011 ◽  
Vol 685 ◽  
pp. 60-64 ◽  
Author(s):  
Shui Yang Lien ◽  
Meng Jia Yang ◽  
Yang Shih Lin ◽  
Chia Fu Chen ◽  
Po Hung Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Vocand FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57% (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68%) of the amorphous silicon thin film solar cell was achieved.

Buffer layer replacement: A method for increasing the conversion efficiency of CIGS thin film solar cells

Optik ◽  
2017 ◽  
Vol 136 ◽  
pp. 222-227 ◽  
Author(s):  
M. Moradi ◽  
R. Teimouri ◽  
M. Saadat ◽  
M. Zahedifar
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Conversion Efficiency ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film

Cu2ZnSnS4 thin film solar cells with 5.8% conversion efficiency obtained by a facile spray pyrolysis technique

RSC Advances ◽  
2015 ◽  
Vol 5 (95) ◽  
pp. 77565-77571 ◽  
Author(s):  
Thi Hiep Nguyen ◽  
Wilman Septina ◽  
Shotaro Fujikawa ◽  
Feng Jiang ◽  
Takashi Harada ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Spray Pyrolysis Technique ◽  
Thin Film Solar Cells ◽  
Spray Pyrolysis Deposition ◽  
Cu2znsns4 Thin Film

A CZTS-based thin film solar cell with a powder conversion efficiency of 5.8% was obtained by using facile spray pyrolysis deposition followed by annealing.

Development of Cu(InGa)Se2 Thin Film Solar Cells with Cd-Free Buffer Layers

1996 ◽  
Vol 426 ◽  
Author(s):  
M. Konagai ◽  
Y. Ohtake ◽  
T. Okamoto
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Light Illumination ◽  
Solar Simulator ◽  
Cell Parameters ◽  
Cigs Thin Film

AbstractCu(InGa)Se2(CIGS) thin film absorbers were fabricated by a three-stage method using a coevaporation apparatus. As a Cd-free buffer layer, ZnSe, InxSe, GaxSey and ZnInxSey buffer layers have been deposited on the CIGS absorber continuously in the same apparatus. Atomic layer deposition (ALD) was employed as a growth technique for ZnSe. This technique offers a good thickness control as well as a good surface coverage. By irradiating with a solar simulator, all the solar cell parameters increased drastically for the first 50 minutes of the irradiation and then saturated at longer irradiation times. This phenomenon did not appear for the cells with a CdS buffer layer. The best efficiency of ZnO/ZnSe/CIGS thin film solar cells with about 10 nm thick ZnSe buffer layer was 11.6%. On the other hand, ZnO/InxSey/CIGS thin film solar cells showed very stable characteristics under the light illumination, and initial measurements show an efficiency of 13.0%.

Efficiency Enhancement by Optimizing Selenization Time for Co-Sputtered Cu2ZnSn(S,Se)4 Thin Film Solar Cells

2019 ◽  
Vol 793 ◽  
pp. 35-39
Author(s):  
Luan Hong Sun ◽  
Hong Lie Shen ◽  
Hu Lin Huang ◽  
Hui Rong Shang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Thin Film Solar Cells ◽  
Efficiency Enhancement ◽  
Diffraction Angle

To reveal the effects of annealing condition on CZTSSe thin film solar cells, co-sputtering and subsequent selenization were used to prepare CZTSSe thin films. Structural, morphological and optical properties of CZTSSe thin films were investigated. CZTSSe thin films with various Se/(S+Se) ratio ranging from 0.69-0.78 were obtained. Representative peaks corresponding to CZTSSe in XRD and Raman results showed a slight shift to lower diffraction angle and wavenumbers. Selenization time significantly influenced the morphologies of CZTSSe films and the gradual grown up grain size was observed. VOCdeficit values down to 839 mV was achieved for the best cell. CZTSSe solar cell with the selenization time of 10 min showed a best conversion efficiency of 5.32%, which presented a 50% enhancement comparing to the solar cells with insufficient and over-selenized absorbers.

scholarly journals First-principles calculation on electronic properties of Bismuth-halide inorganic perovskites for solar cell

2021 ◽  
Vol 01 (01) ◽  
pp. 56-57
Author(s):  
Galhenage A. Sewvandi ◽  
◽  
J.T.S.T. Jayawardane ◽  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Photovoltaic Effect ◽  
Power Conversion ◽  
Thin Film Solar Cells ◽  
Halide Perovskite ◽  
Lead Halide

Solar energy is a commonly used alternate source of energy and it can be utilized based on the principle of the photovoltaic effect. The photovoltaic effect converts sun energy into electrical energy using photovoltaic devices (solar cells). A solar cell device should have high efficiency and a long lifetime to be commercially beneficial. Presently, silicon and thin-film solar cells are widely employed. The crystalline solar cells are more efficient but they are also expensive. Thin-film solar cells are formed by placing one or more thin layers of photovoltaic materials on different substrates. Although these cells have a lower cost, they are also less efficient compared to Si-based solar cells. Organic-inorganic hybrid lead halide perovskite solar cells are one of the most promising low-cost power conversion efficiency technologies that could exceed the 26% threshold. However, the lack of environmental stability and of high lead toxicity are the main bottlenecks that impede the future industrialization and commercialization hybrid lead halide perovskite. Hence It is important to achieve high power conversion efficiency while also maintaining stability and non-toxicity in the development of new lead-free perovskite materials.

scholarly journals Analysis of the High Conversion Efficienciesβ-FeSi2and BaSi2n-i-p Thin Film Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Jung-Sheng Huang ◽  
Kuan-Wei Lee ◽  
Yu-Hsiang Tseng
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Thin Film Solar Cell ◽  
Thin Film Solar Cells ◽  
Drift Current ◽  
Current Densities ◽  
Si Thin Film

Bothβ-FeSi2and BaSi2are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dcI-Vcharacteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculatedI-Vcurves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (ηis 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

Characterization of Solar Cell by varying illumination

2021 ◽  
Vol 10 (3) ◽  
pp. 8-14
Author(s):  
Andrzej Kołodziej ◽  
Michał Kołodziej
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
White Light ◽  
Thin Film Solar Cells ◽  
Solar Simulator ◽  
Experimental Procedure ◽  
White Light Source ◽  
Basic Parameters

This work aims to confirm that the single-diode model of a monocrystalline cell can be used successfully also for thin-film solar cells when their basic parameters are calculated using the method of changing illumination. The authors describe the experimental procedure, in which I–V curves of thin-film solar cells are measured when illumination levels are changing. In experiments, a fully reflective 500 W solar simulator is used as an excellent broadband white light source, which provides the range of 0.01–10 Sun settings.

scholarly journals Plasmon-Enhanced Sunlight Harvesting in Thin-Film Solar Cell by Randomly Distributed Nanoparticle Array

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1380
Author(s):  
Marwa M. Tharwat ◽  
Ashwag Almalki ◽  
Amr M. Mahros
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Near Infrared ◽  
Structural Parameters ◽  
Visible Region ◽  
Nanoparticle Array ◽  
Solar Energy Harvesting ◽  
Infra Red ◽  
Crucial Parameter

In this paper, a randomly distributed plasmonic aluminum nanoparticle array is introduced on the top surface of conventional GaAs thin-film solar cells to improve sunlight harvesting. The performance of such photovoltaic structures is determined through monitoring the modification of its absorbance due to changing its structural parameters. A single Al nanoparticle array is integrated over the antireflective layer to boost the absorption spectra in both visible and near-infra-red regimes. Furthermore, the planar density of the plasmonic layer is presented as a crucial parameter in studying and investigating the performance of the solar cells. Then, we have introduced a double Al nanoparticle array as an imperfection from the regular uniform single array as it has different size particles and various spatial distributions. The comparison of performances was established using the enhancement percentage in the absorption. The findings illustrate that the structural parameters of the reported solar cell, especially the planar density of the plasmonic layer, have significant impacts on tuning solar energy harvesting. Additionally, increasing the plasmonic planar density enhances the absorption in the visible region. On the other hand, the absorption in the near-infrared regime becomes worse, and vice versa.

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