Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector

2011 ◽  
Vol 318 (1) ◽  
pp. 1062-1066 ◽  
Author(s):  
Yuanyuan Du ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Yadong Xu ◽  
Liying Yin ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Radiation Detector ◽  
Bridgman Growth ◽  
Vertical Bridgman

Vertical Bridgman growth and characterization of large ZnGeP2 single crystals

2011 ◽  
Vol 314 (1) ◽  
pp. 306-309 ◽  
Author(s):  
Shixing Xia ◽  
Meng Wang ◽  
Chunhui Yang ◽  
Zuotao Lei ◽  
Guoli Zhu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Bridgman Growth ◽  
Vertical Bridgman

Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

2017 ◽  
Author(s):  
Vasylyna Kopach ◽  
Oleh Kopach ◽  
Larysa Shcherbak ◽  
Petro Fochuk ◽  
Aleksey E. Bolotnikov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bridgman Growth ◽  
Vertical Bridgman

Vertical bridgman growth and characterization of large-diameter single-crystal CdTe

1993 ◽  
Vol 128 (1-4) ◽  
pp. 576-581 ◽  
Author(s):  
Louis G. Casagrande ◽  
Don Di Marzio ◽  
M.B. Lee ◽  
David J. Larson ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Single Crystal ◽  
Large Diameter ◽  
Bridgman Growth ◽  
Vertical Bridgman

Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy

2008 ◽  
Vol 310 (13) ◽  
pp. 3203-3207 ◽  
Author(s):  
Jijun Zhang ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Dongmei Zeng ◽  
Yunxiao Hao ◽  
...  
Keyword(s):  
Bridgman Growth ◽  
Vertical Bridgman

Vertical Bridgman growth of Cd1−yZnyTe and characterization of substrates for use in Hg1−xCdxTe liquids phase epitaxy

1990 ◽  
Vol 101 (1-4) ◽  
pp. 266-269 ◽  
Author(s):  
M. Bruder ◽  
H.-J. Schwarz ◽  
R. Schmitt ◽  
H. Maier ◽  
M.-O. Möller
Keyword(s):  
Bridgman Growth ◽  
Vertical Bridgman

scholarly journals Characterization of secondary phases in modified vertical Bridgman growth CZT

2009 ◽  
Author(s):  
Martine C. Duff ◽  
Kelvin G. Lynn ◽  
Kelly Jones ◽  
Zurong R. Dai ◽  
John P. Bradley ◽  
...  
Keyword(s):  
Secondary Phases ◽  
Bridgman Growth ◽  
Vertical Bridgman

Vertical Bridgman growth and optical characterization of LiNbO3:Cu:Ce crystals

2005 ◽  
Vol 275 (1-2) ◽  
pp. e791-e797 ◽  
Author(s):  
Xuewu Xu ◽  
Xinan Liang ◽  
Tow-Chong Chong ◽  
Shaoning Yuan ◽  
Sanjeev Solanki ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Bridgman Growth ◽  
Vertical Bridgman

Microstructure and Electrical Characterization of In-Doped Cd0.9Mn0.1Te Crystal Grown by the Vertical Bridgman Method

2013 ◽  
Vol 295-298 ◽  
pp. 322-325
Author(s):  
Zhen Wen Yuan ◽  
Lin Jun Wang ◽  
Ji Jun Zhang ◽  
Gao Li Wei ◽  
Kai Feng Qin ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Electrical Characterization ◽  
Compositional Analysis ◽  
Bridgman Method ◽  
X Ray ◽  
Vertical Bridgman Method ◽  
Ir Transmission ◽  
Te Inclusions ◽  
Vertical Bridgman

CdMnTe is one of the key materials for room temperature X-ray and gamma-ray detectors on Environmental Analysis and Monitoring. In this paper, the homogeneous Cd1-xMnxTe (x = 0.1) single crystal ingot was grown by the vertical Bridgman method. The compositional analysis was carried out by SEM/EDS. The Te inclusions were revealed by the IR transmission spectra. In dopant distribution was determined by ICP-AES measurement. The resistivity of CdMnTe was cha-racterized by I-V method. It was found that the segregation coefficient of Mn was 0.97. In dopant contents within 3 to 21 ppm of the ingot were found. The Te inclusions were mainly 8.2-28.3m in size and 1×105-1.5×107cm-3in concentration. I–V measurement reveals that sputtered Au film can form good ohmic contact and all the slices have the resistivity within 107 to 109Ωcm.

scholarly journals Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

2017 ◽  
Author(s):  
A. Bolotnikov ◽  
V. Kopach ◽  
O. Kopach ◽  
L. Shcherbak ◽  
P. Fochuk ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bridgman Growth ◽  
Vertical Bridgman
Sign in / Sign up

Export Citation Format

Share Document