Control of electron-spin polarization via δ-potential in 3-layered semiconductor heterostructure modulated by Rashba spin-orbit coupling

2021 ◽  
Vol 527 ◽  
pp. 167785
Author(s):  
Zeng-Lin Cao ◽  
Mao-Wang Lu ◽  
Xin-Hong Huang ◽  
Qing-Meng Guo ◽  
Shuai-Quan Yang
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Orbit Coupling ◽  
Electron Spin Polarization ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Layered Semiconductor ◽  
Rashba Spin ◽  
Semiconductor Heterostructure

Spin−Orbit Coupling Induced Electron Spin Polarization:  Influence of Heavy Atom Position

1997 ◽  
Vol 119 (6) ◽  
pp. 1323-1327 ◽  
Author(s):  
Shinya Sasaki ◽  
Akio Katsuki ◽  
Kimio Akiyama ◽  
Shozo Tero-Kubota
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Heavy Atom ◽  
Orbit Coupling ◽  
Electron Spin Polarization ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Atom Position

TUNABLE ELECTRON-SPIN POLARIZATION BY δ-POTENTIAL IN LAYERED SEMICONDUCTOR NANOSTRUCTURE

2021 ◽  
Author(s):  
YONG-HONG KONG ◽  
AI-HUA LI ◽  
YAN-JUN GONG ◽  
XI FU
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Atomic Layer ◽  
Electron Spin Polarization ◽  
Spin Orbit Coupling ◽  
Layered Semiconductor ◽  
Semiconductor Nanostructure ◽  
Rashba Spin ◽  
Device Applications ◽  
Spintronics Device

We theoretically explore how to control electron-spin polarization in layered semiconductor nanostructure (LSN) by a [Formula: see text]-potential realized by atomic-layer doping. Due to Rashba spin-orbit coupling, a considerable spin polarization still remains even through a [Formula: see text]-potential is embedded in the LSN. Spin polarization ratio can be controlled by altering weight or position of [Formula: see text]-potential. Based on such an LSN, a structurally-tunable electron-spin filter may be obtained for spintronics device applications.

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