TUNABLE ELECTRON-SPIN POLARIZATION BY δ-POTENTIAL IN LAYERED SEMICONDUCTOR NANOSTRUCTURE

2021 ◽  
Author(s):  
YONG-HONG KONG ◽  
AI-HUA LI ◽  
YAN-JUN GONG ◽  
XI FU
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Atomic Layer ◽  
Electron Spin Polarization ◽  
Spin Orbit Coupling ◽  
Layered Semiconductor ◽  
Semiconductor Nanostructure ◽  
Rashba Spin ◽  
Device Applications ◽  
Spintronics Device

We theoretically explore how to control electron-spin polarization in layered semiconductor nanostructure (LSN) by a [Formula: see text]-potential realized by atomic-layer doping. Due to Rashba spin-orbit coupling, a considerable spin polarization still remains even through a [Formula: see text]-potential is embedded in the LSN. Spin polarization ratio can be controlled by altering weight or position of [Formula: see text]-potential. Based on such an LSN, a structurally-tunable electron-spin filter may be obtained for spintronics device applications.

Spin−Orbit Coupling Induced Electron Spin Polarization:  Influence of Heavy Atom Position

1997 ◽  
Vol 119 (6) ◽  
pp. 1323-1327 ◽  
Author(s):  
Shinya Sasaki ◽  
Akio Katsuki ◽  
Kimio Akiyama ◽  
Shozo Tero-Kubota
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Heavy Atom ◽  
Orbit Coupling ◽  
Electron Spin Polarization ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Atom Position

BIAS-TUNABLE ELECTRON-SPIN POLARIZATION IN HYBRID FERROMAGNETIC-SCHOTTKY-STRIPE AND SEMICONDUCTOR NANOSTRUCTURE

2010 ◽  
Vol 24 (11) ◽  
pp. 1069-1077 ◽  
Author(s):  
SAI-YAN CHEN ◽  
MAO-WANG LU ◽  
YI TANG ◽  
GUI-LIAN ZHANG
Keyword(s):  
Numerical Simulations ◽  
Spin Polarization ◽  
Electron Spin ◽  
Potential Application ◽  
Normal Metal ◽  
Electron Spin Polarization ◽  
Spin Filter ◽  
Semiconductor Nanostructure ◽  
Semiconductor Heterostructure ◽  
Tunable Spin Filter

Recently, an electron-spin filter was proposed by depositing a nanosized ferromagnetic metal stripe and a Schottky normal metal stripe on the top of the semiconductor heterostructure [F. Zhai, H. Q. Xu and Y. Guo, Phys. Rev. B70 (2004) 085308]. This device has a considerable electron-spin polarization and potential application in spintronics. Here we apply a bias to this device and theoretically demonstrate how to manipulate its electron-spin polarization. By numerical simulations, we found that not only the amplitude of the electron-spin polarization but also its sign varies with the bias, giving rise to a bias-tunable spin filter device.

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