TUNABLE ELECTRON-SPIN POLARIZATION BY δ-POTENTIAL IN LAYERED SEMICONDUCTOR NANOSTRUCTURE

We theoretically explore how to control electron-spin polarization in layered semiconductor nanostructure (LSN) by a [Formula: see text]-potential realized by atomic-layer doping. Due to Rashba spin-orbit coupling, a considerable spin polarization still remains even through a [Formula: see text]-potential is embedded in the LSN. Spin polarization ratio can be controlled by altering weight or position of [Formula: see text]-potential. Based on such an LSN, a structurally-tunable electron-spin filter may be obtained for spintronics device applications.

Chromophore-radical excited state antiferromagnetic exchange controls the sign of photoinduced ground state spin polarization

A change in the sign of the ground state electron spin polarization (ESP) is reported in complexes where an organic radical (nitronylnitroxide, NN) is covalently attached to a donor–acceptor chromophore via two different meta-phenylene bridges.