Current-Induced Spin Photocurrent in GaAs at Room Temperature

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

Спонтанный спиновый магнетизм донорных электронов проводимости гибридизированных состояний кристалла, образованных системой примесных атомов 3d-элементов низкой концентрации (<1 at.%)

The given work is devoted to the experimental proof of existing the spontaneous spin polarization of the donor electron system of 3d-transition element impurity atoms of low concentration (<1 at.%) in a mercury selenide crystal. For this purpose there have been measured the dependences of the magnetization on the magnetic field strength. As a result of the analysis of the obtained dependences, there were extracted the impurity contributions, which are described by the magnetization curves typical of the ferromagnets, and by the magnetic parameters conforming to the spontaneous magnetism of the systems under study, which are unambiguously related to the donor conduction electrons of the outer d-shells of impurity atoms. By its nature, according to the developed theoretical concepts, the spontaneous spin polarization manifests itself in exchange interaction, taking place in hybridizing the electronic states of the impurity atom and the conduction band ones of the crystal.

Comparative study of the electronic structure and optical properties of the Heusler alloys Co2MGa and Co2MAl (M = Fe and Ni)

The electronic structure and optical properties of the Heusler alloys Co2NiGa, Co2NiAl, Co2FeGa, and Co2FeAl are reported and compared in this work. In the Fe-based alloys, Co2FeGa and Co2FeAl, the electronic structure is found to have 100% spin polarization with the indirect energy gap in the [Formula: see text]-[Formula: see text] direction, whereas in Co2NiGa and Co2NiAl, the density of states is metallic in both spin projections with spin polarization of 55% (Co2NiGa) and 37% (Co2NiAl). Total and Co partial magnetic moments of all Heusler alloys for the optimized lattice parameters were found in a good agreement with previous calculations and experimental data. The frequency dependence of the real and imaginary parts of the complex dielectric constant for the Heusler alloys is studied in the spectrum region of 0.08–5 eV. The research results are discussed based on the performed calculations of the electronic structure. It was found that the character of variations of the spectral parameters of the alloys is typical for media with the metallic conductivity. In the IR region, the mechanism of the intraband acceleration of electrons by the light wave field dominates. The significant changes in the optical spectrum, magnetic moment, spin polarization and electronic structure were revealed in Co2MGa and Co2MAl for different M atoms which motivate further investigations of the Co-based Heusler alloys as promising materials for spintronics.