Kinetic Monte Carlo simulations applied to irradiated materials: The effect of cascade damage in defect nucleation and growth

2006 ◽  
Vol 351 (1-3) ◽  
pp. 78-87 ◽  
Author(s):  
M.J. Caturla ◽  
N. Soneda ◽  
T. Diaz de la Rubia ◽  
M. Fluss
2013 ◽  
Vol 740-742 ◽  
pp. 393-396
Author(s):  
Maxim N. Lubov ◽  
Jörg Pezoldt ◽  
Yuri V. Trushin

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.


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