Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)

2013 ◽  
Vol 740-742 ◽  
pp. 393-396
Author(s):  
Maxim N. Lubov ◽  
Jörg Pezoldt ◽  
Yuri V. Trushin
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Cluster Size ◽  
Kinetic Monte Carlo ◽  
Nucleation And Growth ◽  
Nucleation Density ◽  
Nucleation Process ◽  
Impurity Effects ◽  
Kinetic Monte Carlo Simulations ◽  
The Mean

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.

Kinetic Monte Carlo Simulations of Self-organization of Ge Islands on Si(001)

2021 ◽  
Author(s):  
Paramita Ghosh ◽  
Nidhi Gupta ◽  
Monika Dhankhar ◽  
Madhav Ranganathan
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Kinetic Monte Carlo ◽  
The Self ◽  
Self Organization ◽  
Kinetic Monte Carlo Simulation ◽  
Kinetic Monte Carlo Simulations

The self-organization of germanium islands on a silicon (001) substrate is studied using a lattice--based kinetic Monte Carlo simulation. These islands form spontaneously via Stranski-Krastanov mode during growth. The interplay...

Kinetic Monte Carlo Simulation of Nucleation and Growth Behavior in Surfactant-Mediated Epitaxy

2007 ◽  
Vol 121-123 ◽  
pp. 1149-1152
Author(s):  
D.M. Wang ◽  
Z.J. Ding
Keyword(s):  
Monte Carlo ◽  
Low Temperatures ◽  
Early Stage ◽  
Kinetic Monte Carlo ◽  
Nucleation And Growth ◽  
Growth Behavior ◽  
Shape Transition ◽  
Nucleus Density ◽  
Kinetic Monte Carlo Simulations ◽  
Island Density

The behavior of island shape transition and nucleus density evolution in the early stage of epitaxial growth mediated by a monolayer of surfactant is studied by using a kinetic Monte Carlo simulations. The main kinetic processes included in the model are deposition, diffusion of atoms, exchange of adatoms with their underneath surfactant atoms, and reexchange in which an exchanged adatom resurfaces to the top of the surfactant layer. The simulation produces pattern transitions from small compact islands at low temperatures, to fractal-like islands at intermediate temperatures where the deposited adatoms can be easily incorporated into the surfactant layer, and then to regular compact islands at high temperatures where the reexchange becomes active. The island density as a function of temperature exhibits a complex N-shape. These results provide a reasonable explanation for the observed temperature dependence of the growth mode in existing experiments.

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