Effects of complex agents on the physical properties of Ag–In–S ternary semiconductor films using chemical bath deposition

2009 ◽  
Vol 115 (1) ◽  
pp. 14-20 ◽  
Author(s):  
Kong-Wei Cheng ◽  
Sheng-Chih Wang
Keyword(s):  
Physical Properties ◽  
Chemical Bath Deposition ◽  
Semiconductor Films ◽  
Ternary Semiconductor

The physical properties and photoresponse of AgIn5S8 polycrystalline film electrodes fabricated by chemical bath deposition

2007 ◽  
Vol 190 (1) ◽  
pp. 77-87 ◽  
Author(s):  
Kong-Wei Cheng ◽  
Chao-Ming Huang ◽  
Guan-Ting Pan ◽  
Wen-Sheng Chang ◽  
Tai-Chou Lee ◽  
...  
Keyword(s):  
Physical Properties ◽  
Chemical Bath Deposition ◽  
Polycrystalline Film

Some physical properties of Sn-doped CdO thin films prepared by chemical bath deposition

2006 ◽  
Vol 60 (29-30) ◽  
pp. 3866-3870 ◽  
Author(s):  
L.R. de León-Gutiérrez ◽  
J.J. Cayente-Romero ◽  
J.M. Peza-Tapia ◽  
E. Barrera-Calva ◽  
J.C. Martínez-Flores ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Chemical Bath Deposition ◽  
Cdo Thin Films

Growth Mechanism of thin Film Wide-Gap Semiconductors by Chemical Bath Deposition Technique

1999 ◽  
Vol 558 ◽  
Author(s):  
P. K. Nair ◽  
P. Parmananda ◽  
M. T. S. Nair
Keyword(s):  
Thin Film ◽  
Mathematical Model ◽  
Chemical Bath Deposition ◽  
Growth Mechanism ◽  
Dissociation Constants ◽  
Growth Curves ◽  
Deposition Process ◽  
Terminal Phase ◽  
Semiconductor Films ◽  
Complex Ions

ABSTRACTChemical bath deposition is a thin film technique in which semiconductor thin films of typically 0.02 – 1 μm thickness are deposited on substrates immersed in dilute baths containing metal ions and a source of sulfide or selenide ions. Many I–VI, II–VI, IV–VI, and V–VI semiconductors are included in the list of materials deposited by this technique, II–VI compounds CdS, CdSe, ZnS and ZnSe being the most investigated. However, a mathematical model describing the growth mechanism of these films still remains to be established. The deposition process consists of a nucleation phase, growth phase, and a terminal phase, each of which depends on the concentration of the ions in the deposition bath, its temperature, dissociation constants of the metal complex ions, etc. In this paper we propose a mathematical model, which can qualitatively account for most of the features of the experimental growth curves of chemically deposited semiconductor films.

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