scholarly journals Research in physical properties of AlxGa1-xAs III-V Arsenide ternary semiconductor alloys

2014 ◽  
Vol 9 (12) ◽  
pp. 281-291
Author(s):  
Srivani Alla ◽  
Ram Murthy Vedam ◽  
Veera Raghavaiah G.
Keyword(s):  
Physical Properties ◽  
Semiconductor Alloys ◽  
Ternary Semiconductor

A Dynamic Model of III-V Ternary Semiconductor Alloys in the Epitaxial Growth

1994 ◽  
Vol 340 ◽  
Author(s):  
Bing-Lin Gu ◽  
Jing-Zhi Yu ◽  
Xiao Hu ◽  
Kaoru Ohno ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Dynamic Model ◽  
Ground State ◽  
Wave Method ◽  
Semiconductor Alloys ◽  
Concentration Wave ◽  
Surface Layers ◽  
Ordered Structures ◽  
Effective Interactions ◽  
Ternary Semiconductor ◽  
The Difference

ABSTRACTA concentration wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deeper layers in III – V alloys. The ground state ordered structures of ternary III – V semiconductor alloys are deduced and a dynamic model is established.

Mutual Passivation in Dilute GaNxAs1-x Alloys

2005 ◽  
Vol 864 ◽  
Author(s):  
K. M. Yu ◽  
W. Walukiewicz ◽  
J. Wu ◽  
D. E. Mars ◽  
M. A. Scarpulla ◽  
...  
Keyword(s):  
Nearest Neighbor ◽  
Diffusion Length ◽  
Average Distance ◽  
Alloy System ◽  
Group Iv ◽  
Semiconductor Alloys ◽  
Drastic Reduction ◽  
Free Electron Concentration ◽  
Ternary Semiconductor ◽  
Good Agreement

AbstractThe dilute GaNxAs1-x alloys (with x up to 0.05) have exhibited many unusual properties as compared to the conventional binary and ternary semiconductor alloys. We report on a new effect in the GaNxAs1-x alloy system in which electrically active substitutional group IV donors and isoelectronic N atoms passivate each other's activity. This mutual passivation occurs in dilute GaNxAs1-x doped with group IV donors through the formation of nearest neighbor IVGa- NAs pairs when the samples are annealed under conditions such that the diffusion length of the donors is greater than or equal to the average distance between donor and N atoms. The passivation of the shallow donors and the NAs atoms is manifested in a drastic reduction in the free electron concentration and, simultaneously, an increase in the fundamental bandgap. This mutual passivation effect is demonstrated in both Si and Ge doped GaNxAs1-x alloys. Analytical calculations of the passivation process based on Ga vacancy mediated diffusion show good agreement with the experimental results.

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