Improved tight-binding parameters of III-V semiconductor alloys and their application to type-II superlattices

A simple tight-binding method for ternary semiconductor alloys is generalized to calculate the properties of the semiconductor alloys accurately. Specifically independently adjustable parameters, which represent compositional disorder, are incorporated in all the ternary tight-binding parameters. Energy levels and effective masses agree well with the reference values only by the proposed method. We have applied the method to calculate the band gaps and a spectrum of the absorption coefficient of (InAs)/(GaInSb) type-II superlattices. The calculated band-gaps agree well with the experimental ones and we could well reproduce the shape of the absorption coefficient spectrum calculated by an empirical pseudopotential scheme.

Design of Reconfigurable Micro fluidic Met surface with Different Semiconductor Alloys

In this work, design of a reconfigurable metasurface using all-dielectric materials is presented. An elliptical all-dielectric microfluidic-based metasurface is designed using Rogers RO3210 substrate (ε = 10.2 and tan δ = 0.03). The substrate is covered with microfluidic channel which is filled with five various AgTiTe2, Cu2S, Te.5 Se.5, CuTSe2 and Cu3SbSe4. semiconductor alloys. The reflection and transmission characteristics of the designed metasurface are analyzed in the frequency range of 20-30 GHz using COMSOL Multiphysics software. The results demonstrate that change in the semiconductor alloy in the microfluidic channel various the dynamic transmission and reflection characteristics of the metasurface and thus depicts a reconfigurable operation of the proposed design.

B4/32Ga28/32Sb10/32As22/32 Three-Dimensional Semiconductor Superlattice

Self-assembly of BD -rich A x B 1-x C y D 1-y was studied for a lot of semiconductor alloys. An occurrence of identical clustersshould be due to a decrease of the bond energy, internal strain energy or both of them. An arrangement of the clusters is disordered since the contents of minority atoms are in the dilute or ultra dilute limits in the considered alloys. B 4/32 Ga 28/32 Sb 10/32 As 22/32 semiconductor alloy with the three-dimensional superlattice is presented. This superlattice should be stable against disordering due to its minimal free energy. The superlattice forms by the identical cubic units consisting of 64 atoms and is the three-dimensional semiconductor soft X-ray diffraction grating.