Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer

2015 ◽  
Vol 157 ◽  
pp. 63-68 ◽  
Author(s):  
Chen-Yu Shieh ◽  
Zhen-Yu Li ◽  
Jenq-Yang Chang ◽  
Gou-Chung Chi
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Epitaxial Lateral Overgrowth ◽  
Light Emitting ◽  
Lateral Overgrowth ◽  
Nitrided Titanium

Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

2015 ◽  
Vol 51 (5) ◽  
pp. 1-5 ◽  
Author(s):  
Chen-Hung Tsai ◽  
Mu-Hsin Ma ◽  
Yu-Feng Yin ◽  
Hsiang-Wei Li ◽  
Wei-Chih Lai ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Nanorod Array ◽  
Epitaxial Lateral Overgrowth ◽  
Light Emitting ◽  
Lateral Overgrowth

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

2008 ◽  
Vol 93 (8) ◽  
pp. 081108 ◽  
Author(s):  
C. H. Chiu ◽  
H. H. Yen ◽  
C. L. Chao ◽  
Z. Y. Li ◽  
Peichen Yu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Nanorod Array ◽  
Epitaxial Lateral Overgrowth ◽  
Light Emitting ◽  
Lateral Overgrowth
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