Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth
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2008 ◽
Vol 310
(23)
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pp. 5170-5174
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2008 ◽
2015 ◽
Vol 51
(5)
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pp. 1-5
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2015 ◽
Vol 157
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pp. 63-68
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