The effect of uniaxial pressure, temperature and electric field on the internal bias field in the lead-based piezoelectric ceramics

2016 ◽  
Vol 164 ◽  
pp. 248-251 ◽  
Author(s):  
Yangxi Yan ◽  
Yujun Feng ◽  
Zhimin Li
2018 ◽  
Vol 53 (18) ◽  
pp. 12762-12769 ◽  
Author(s):  
Xudong Qi ◽  
Enwei Sun ◽  
Shiyang Li ◽  
Weiming Lü ◽  
Rui Zhang ◽  
...  

CrystEngComm ◽  
2019 ◽  
Vol 21 (2) ◽  
pp. 348-355 ◽  
Author(s):  
Xudong Qi ◽  
Enwei Sun ◽  
Weiming Lü ◽  
Shiyang Li ◽  
Bin Yang ◽  
...  

The dynamic ferroelectric hysteresis loops with internal bias field were investigated in poled and aged Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal.


2013 ◽  
Vol 39 (7) ◽  
pp. 7703-7708 ◽  
Author(s):  
Gang Du ◽  
Ruihong Liang ◽  
Li Wang ◽  
Kui Li ◽  
Wenbin Zhang ◽  
...  

2007 ◽  
Vol 307 (2) ◽  
pp. 372-377 ◽  
Author(s):  
Toshio Kikuta ◽  
Atsushi Takagi ◽  
Toshinari Yamazaki ◽  
Noriyuki Nakatani

2001 ◽  
Vol 688 ◽  
Author(s):  
Lucian Pintilie ◽  
Ion Matei ◽  
Ioana Pintilie ◽  
Horia V. Alexandru ◽  
Ciceron Berbecaru

AbstractPyroelectric properties of triglycine sulfate (TGS) thick films, separately doped with L and D alanine were investigated. Internal bias field of about 1 kV/cm, induced by the two dopants, stabilize the polarization in the opposite direction on the ferroelectric axis. Pyroelectric current (under constant stress) was recorded with a computer controlled Keithley 6517 electrometer, crossing up and down the Curie point. A reverse external electric field was applied on doped materials during heating, crossing up the Curie point. It is shown that the pyroelectric coefficient can be increased about four times at room temperature under un optimized DC electric field applied on the pyroelectric wafer.


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