Transition metal atom doped Ni3S2 as efficient bifunctional electrocatalysts for overall water splitting: Design strategy from DFT studies

2021 ◽  
Vol 516 ◽  
pp. 111955
Author(s):  
Yibo Chen ◽  
Xinyu Zhang ◽  
Jiaqian Qin ◽  
Riping Liu
2018 ◽  
Vol 6 (24) ◽  
pp. 11446-11452 ◽  
Author(s):  
Xu Zhang ◽  
An Chen ◽  
Zihe Zhang ◽  
Menggai Jiao ◽  
Zhen Zhou

By means of first-principles computations, we screened a series of transition metal atom anchored C2N monolayers (TMx@C2N) as bifunctional electrocatalysts for both HER and OER.


Author(s):  
Min Wang ◽  
Li Zhang ◽  
Yijia He ◽  
Hongwei Zhu

This review summarizes recent advances relating to transition metal sulfide (TMS)-based bifunctional electrocatalysts, providing guidelines for the design and fabrication of TMS-based catalysts for practical application in water electrolysis.


2020 ◽  
Vol 8 (28) ◽  
pp. 14234-14242 ◽  
Author(s):  
Liang Yan ◽  
Bing Zhang ◽  
Shangyou Wu ◽  
Jianlin Yu

Exploring highly efficient, stable, and non-noble-metal bifunctional electrocatalysts for overall water splitting is greatly desired but still remains an ongoing challenge.


Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 87-95
Author(s):  
M. S. Baranava ◽  
P. A. Praskurava

The search for fundamental physical laws which lead to stable high-temperature ferromagnetism is an urgent task. In addition to the already synthesized two-dimensional materials, there remains a wide list of possible structures, the stability of which is predicted theoretically. The article suggests the results of studying the electronic properties of MAX3 (M = Cr, Fe, A = Ge, Si, X = S, Se, Te) transition metals based compounds with nanostructured magnetism. The research was carried out using quantum mechanical simulation in specialized VASP software and calculations within the Heisenberg model. The ground magnetic states of twodimensional MAX3 and the corresponding energy band structures are determined. We found that among the systems under study, CrGeTe3 is a semiconductor nanosized ferromagnet. In addition, one is a semiconductor with a bandgap of 0.35 eV. Other materials are antiferromagnetic. The magnetic moment in MAX3 is localized on the transition metal atoms: in particular, the main one on the d-orbital of the transition metal atom (and only a small part on the p-orbital of the chalcogen). For CrGeTe3, the exchange interaction integral is calculated. The mechanisms of the formation of magnetic order was established. According to the obtained exchange interaction integrals, a strong ferromagnetic order is formed in the semiconductor plane. The distribution of the projection density of electronic states indicates hybridization between the d-orbital of the transition metal atom and the p-orbital of the chalcogen. The study revealed that the exchange interaction by the mechanism of superexchange is more probabilistic.


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