The OCS method of seeding point detection using visible vision for large-diameter sapphire single crystal growth via the Kyropoulos method

Measurement ◽  
2019 ◽  
Vol 137 ◽  
pp. 39-48 ◽  
Author(s):  
Binchao Yu ◽  
Tiezhu Qiao ◽  
Haitao Zhang ◽  
Gaowei Yan
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Large Diameter ◽  
Single Crystal Growth ◽  
Sapphire Single Crystal ◽  
Point Detection ◽  
Kyropoulos Method

Thermal Optimization of Cz Silicon Single Crystal Growth

2009 ◽  
Vol 156-158 ◽  
pp. 217-222 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub ◽  
M.G. Milvidskii
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Large Diameter ◽  
Single Crystal Growth ◽  
Intrinsic Point Defect ◽  
Thermal Shield ◽  
Internal Cone ◽  
Hot Zone

In an application to large diameter Czochralski (CZ) silicon (Si) single crystal growing the influence on crystal temperature field of various thermal shield assemblies located near to its surface is discussed. By means of mathematical modeling the computer model of thermal processes in an application to a hot zone of "Redmet-90" puller [1], intended for 200 and 300 mm diameter Si single crystal growth is developed. The role of the ring shield and the shield assembly, consisting of two shields (an internal cone and an external one is repeating the crucible shape) and being as a basis of some patents, is investigated. On the basis of the carried out calculations the new thermal shield assembly for "Redmet-90" puller was offered. Its influence on formation of the characteristic thermal zones in growing single crystal, corresponding to defect formation processes in dislocation-free Si crystals (the recombination of intrinsic point defect – IPD, and the formation of their agglomerates) is discussed. The influence of a melt flow on the liquid/solid interface (LSI) shape and thermal stability of crystal growing process is analyzed.

To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method

2013 ◽  
Vol 363 ◽  
pp. 25-32 ◽  
Author(s):  
H.S. Fang ◽  
Y.Y. Pan ◽  
L.L. Zheng ◽  
Q.J. Zhang ◽  
S. Wang ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Interface Shape ◽  
Sapphire Single Crystal

Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth

1984 ◽  
Vol 23 (Part 2, No. 1) ◽  
pp. L302-L304 ◽  
Author(s):  
Kazutaka Terashima ◽  
Tooru Katsumata ◽  
Fumio Orito ◽  
Tsuguo Fukuda
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Single Crystal ◽  
Large Diameter ◽  
Single Crystal Growth ◽  
Vertical Magnetic Field
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