To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.09.050 ◽

2013 ◽

Vol 363 ◽

pp. 25-32 ◽

Author(s):

H.S. Fang ◽

Y.Y. Pan ◽

L.L. Zheng ◽

Q.J. Zhang ◽

S. Wang ◽

...

Keyword(s):

Thermal Stress ◽

Crystal Growth ◽

Single Crystal ◽

Single Crystal Growth ◽

Interface Shape ◽

Sapphire Single Crystal

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The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.05.041 ◽

2014 ◽

Vol 385 ◽

pp. 22-27 ◽

Author(s):

Min-Jae Hur ◽

Xue-Feng Han ◽

Dong-Seok Song ◽

Tae-Hyung Kim ◽

Nam-Jin Lee ◽

...

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Single Crystal Growth ◽

Interface Shape ◽

Growth Interface ◽

Crystal Rotation ◽

Sapphire Single Crystal

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Influence of solid–liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.03.045 ◽

2012 ◽

Vol 360 ◽

pp. 35-37 ◽

Author(s):

G.N. Kozhemyakin

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Single Crystal Growth ◽

Liquid Interface ◽

Interface Shape ◽

Ultrasonic Fields ◽

Solid Liquid Interface ◽

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Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth

Journal of the Korean Crystal Growth and Crystal Technology ◽

10.6111/jkcgct.2013.23.3.129 ◽

2013 ◽

Vol 23 (3) ◽

pp. 129-134 ◽

Author(s):

Jin Hyung Kim ◽

Yong Ho Park ◽

Young Cheol Lee

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Numerical Simulations ◽

Single Crystal Growth ◽

Sapphire Single Crystal

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Research on Annealing of Sapphire Single Crystal Growth by Kyropoulos Method

Advanced Material Science and Engineering (AMSE2016) ◽

10.1142/9789813141612_0063 ◽

2016 ◽

Author(s):

Dong-yang WANG ◽

Wei HE ◽

I. L. LI ◽

Jian-pang ZHAI

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Single Crystal Growth ◽

Sapphire Single Crystal ◽

Kyropoulos Method

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The OCS method of seeding point detection using visible vision for large-diameter sapphire single crystal growth via the Kyropoulos method

Measurement ◽

10.1016/j.measurement.2019.01.019 ◽

2019 ◽

Vol 137 ◽

pp. 39-48 ◽

Author(s):

Binchao Yu ◽

Tiezhu Qiao ◽

Haitao Zhang ◽

Gaowei Yan

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Large Diameter ◽

Single Crystal Growth ◽

Sapphire Single Crystal ◽

Point Detection ◽

Kyropoulos Method

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CFD analysis for effects of the crucible geometry on melt convection and growth behavior during sapphire single crystal growth by Kyropoulos process

Journal of the Korean Crystal Growth and Crystal Technology ◽

10.6111/jkcgct.2012.22.3.115 ◽

2012 ◽

Vol 22 (3) ◽

pp. 115-121 ◽

Author(s):

J.H. Ryu ◽

W.J. Lee ◽

Y.C. Lee ◽

H.H. Jo ◽

Y.H. Park

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Single Crystal Growth ◽

Growth Behavior ◽

Cfd Analysis ◽

Sapphire Single Crystal ◽

Melt Convection

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Development of a thermal stress analysis system for anisotropic single crystal growth

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)02193-5 ◽

2002 ◽

Vol 236 (1-3) ◽

pp. 455-465 ◽

Author(s):

N. Miyazaki

Keyword(s):

Thermal Stress ◽

Crystal Growth ◽

Single Crystal ◽

Stress Analysis ◽

Single Crystal Growth ◽

Thermal Stress Analysis ◽

Analysis System

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Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.12.078 ◽

2017 ◽

Vol 474 ◽

pp. 24-30 ◽

Author(s):

Min-Jae Hur ◽

Xue-Feng Han ◽

Ho-Gil Choi ◽

Kyung-Woo Yi

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Shape Control ◽

Single Crystal Growth ◽

Growth System ◽

Front Shape ◽

Sapphire Single Crystal

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Thermal stress simulation of optimized SiC single crystal growth crucible structure

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2018.09.021 ◽

2018 ◽

Vol 504 ◽

pp. 31-36

Author(s):

Y.B. Yang ◽

J. Wang ◽

Y.M. Wang

Keyword(s):

Thermal Stress ◽

Crystal Growth ◽

Single Crystal ◽

Single Crystal Growth ◽

Stress Simulation

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Anisotropic Three-Dimensional Thermal Stress Modeling and Simulation of Homoepitaxial AlN Single Crystal Growth by the Physical Vapor Transport Method

Crystal Growth & Design ◽

10.1021/acs.cgd.8b00118 ◽

2018 ◽

Vol 18 (5) ◽

pp. 2998-3007 ◽

Author(s):

Qikun Wang ◽

Jiali Huang ◽

Zhihao Wang ◽

Guangdong He ◽

Dan Lei ◽

...

Keyword(s):

Thermal Stress ◽

Crystal Growth ◽

Modeling And Simulation ◽

Single Crystal ◽

Three Dimensional ◽

Single Crystal Growth ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Transport Method ◽

Vapor Transport Method

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