Large diameter SN-doped indium phosphide single crystal growth by LEC method

2005 ◽  
Author(s):  
Niefeng Sun ◽  
Lubong Mao ◽  
Xiaolong Zhou ◽  
Xiawan Wu ◽  
Weilian Guo ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Indium Phosphide ◽  
Single Crystal ◽  
Large Diameter ◽  
Single Crystal Growth

Thermal Optimization of Cz Silicon Single Crystal Growth

2009 ◽  
Vol 156-158 ◽  
pp. 217-222 ◽  
Author(s):  
A.I. Prostomolotov ◽  
N.A. Verezub ◽  
M.G. Milvidskii
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Defect Formation ◽  
Large Diameter ◽  
Single Crystal Growth ◽  
Intrinsic Point Defect ◽  
Thermal Shield ◽  
Internal Cone ◽  
Hot Zone

In an application to large diameter Czochralski (CZ) silicon (Si) single crystal growing the influence on crystal temperature field of various thermal shield assemblies located near to its surface is discussed. By means of mathematical modeling the computer model of thermal processes in an application to a hot zone of "Redmet-90" puller [1], intended for 200 and 300 mm diameter Si single crystal growth is developed. The role of the ring shield and the shield assembly, consisting of two shields (an internal cone and an external one is repeating the crucible shape) and being as a basis of some patents, is investigated. On the basis of the carried out calculations the new thermal shield assembly for "Redmet-90" puller was offered. Its influence on formation of the characteristic thermal zones in growing single crystal, corresponding to defect formation processes in dislocation-free Si crystals (the recombination of intrinsic point defect – IPD, and the formation of their agglomerates) is discussed. The influence of a melt flow on the liquid/solid interface (LSI) shape and thermal stability of crystal growing process is analyzed.

The single crystal growth and characterization of indium phosphide

1984 ◽  
Vol 66 (2) ◽  
pp. 317-326 ◽  
Author(s):  
P.J. Roksnoer ◽  
M.M.B. Van Rijbroek-Van Den Boom
Keyword(s):  
Crystal Growth ◽  
Indium Phosphide ◽  
Single Crystal ◽  
Single Crystal Growth

Vertical Magnetic Field Applied LEC Apparatus for Large Diameter GaAs Single Crystal Growth

1984 ◽  
Vol 23 (Part 2, No. 1) ◽  
pp. L302-L304 ◽  
Author(s):  
Kazutaka Terashima ◽  
Tooru Katsumata ◽  
Fumio Orito ◽  
Tsuguo Fukuda
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Single Crystal ◽  
Large Diameter ◽  
Single Crystal Growth ◽  
Vertical Magnetic Field

Large diameter LaBGeO5 single crystal growth for QPM device with long interaction length

2020 ◽  
Vol 543 ◽  
pp. 125707
Author(s):  
Mitsuyoshi Sakairi ◽  
Shunji Takekawa ◽  
Masahiro Sasaura ◽  
Junji Hirohashi
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Large Diameter ◽  
Single Crystal Growth ◽  
Interaction Length

Physical modelling of the melt flow during large-diameter silicon single crystal growth

2003 ◽  
Vol 257 (1-2) ◽  
pp. 7-18 ◽  
Author(s):  
L. Gorbunov ◽  
A. Pedchenko ◽  
A. Feodorov ◽  
E. Tomzig ◽  
J. Virbulis ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Large Diameter ◽  
Physical Modelling ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Melt Flow
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