Improvement photovoltaic performance of quantum dot-sensitized solar cells using deposition of metal-doped ZnS passivation layer on the TiO2 photoanode

2018 ◽  
Vol 198 ◽  
pp. 8-14 ◽  
Author(s):  
Najme Firoozi ◽  
Hossein Dehghani ◽  
Malihe Afrooz ◽  
Seyede Sara Khalili
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Photovoltaic Performance ◽  
Passivation Layer ◽  
Metal Doped ◽  
Sensitized Solar Cells ◽  
Tio2 Photoanode

Improved photovoltaic performance of quantum dot-sensitized solar cells using multi-layered semiconductors with the effect of a ZnSe passivation layer

2017 ◽  
Vol 41 (13) ◽  
pp. 5942-5949 ◽  
Author(s):  
Archana Subramanian ◽  
Dinah Punnoose ◽  
Sunkara Srinivasa Rao ◽  
Chebrolu Venkata Thulasi Varma ◽  
Bandari Naresh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Photovoltaic Performance ◽  
Passivation Layer ◽  
Electron Recombination ◽  
Layered Semiconductors ◽  
Sensitized Solar Cells

ZnSe was deposited on a TiO2/PbS/CdS/CdSe photoanode, which was more efficient in reducing electron recombination in the QDSSCs.

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

2018 ◽  
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Electrochemical Impedance ◽  
Photovoltaic Performance ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Electrolyte Interface ◽  
Sensitized Solar Cells

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSSCs). In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is significantly higher than the 2.15% and 3.23% observed for QDSSCs with a TiO2/CuInS2 device and TiO2/CuInS2/ZnS, respectively. Electrochemical impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.

Phosphating passivation layer for quantum dot sensitized solar cells

2021 ◽  
Vol 727 ◽  
pp. 138678
Author(s):  
Mei Xin Chen ◽  
Ya Qian Bai ◽  
Xin Na Guan ◽  
Jia Wei Chen ◽  
Jing Hui Zeng
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Passivation Layer ◽  
Sensitized Solar Cells

Quantum-dot-sensitized Solar Cells with Metal Electrodes

2014 ◽  
Vol 17 (1) ◽  
Author(s):  
Stavroula Sfaelou ◽  
Vassilios Dracopoulos ◽  
Panagiotis Lianos
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Tin Oxide ◽  
Passivation Layer ◽  
Metal Electrodes ◽  
Nanocrystalline Titania ◽  
Anode Electrode ◽  
Sensitized Solar Cells

AbstractQuantum dot sensitized solar cells have been made by using nanocrystalline titania as photocatalyst, sensitized in the Visible by a combination of quantum dot sensitizers: first a layer of CdS, followed by deposition of CdSe and finally a passivation layer of ZnS on the top. An inox grid was used as anode electrode and its functionality was compared with that of transparent fluorine-doped tin oxide (FTO) electrodes. Cu

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

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