Optimization of the CdS quantum dot sensitized solar cells with ZnS passivation layer

2018 ◽  
Vol 29 (17) ◽  
pp. 14796-14802 ◽  
Author(s):  
Wei Zheng ◽  
Yinan Zhang ◽  
Di Wang ◽  
Qiming Wang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Passivation Layer ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

High performance of TiO2/CdS quantum dot sensitized solar cells with a Cu–ZnS passivation layer

2017 ◽  
Vol 41 (5) ◽  
pp. 1914-1917 ◽  
Author(s):  
Young-Seok Lee ◽  
Chandu V. V. M. Gopi ◽  
Araveeti Eswar Reddy ◽  
Chandu Nagaraju ◽  
Hee-Je Kim
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Light Harvesting ◽  
Charge Recombination ◽  
Passivation Layer ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells

A Cu–ZnS passivation layer effectively suppresses the charge recombination and increases the light harvesting in QDSSCs.

Phosphating passivation layer for quantum dot sensitized solar cells

2021 ◽  
Vol 727 ◽  
pp. 138678
Author(s):  
Mei Xin Chen ◽  
Ya Qian Bai ◽  
Xin Na Guan ◽  
Jia Wei Chen ◽  
Jing Hui Zeng
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Passivation Layer ◽  
Sensitized Solar Cells

High efficiency CdS quantum-dot-sensitized solar cells with boron and nitrogen co-doped TiO2 nanofilm as effective photoanode

2015 ◽  
Vol 169 ◽  
pp. 103-108 ◽  
Author(s):  
Ling Li ◽  
Junying Xiao ◽  
Xichuan Yang ◽  
Wenming Zhang ◽  
Huayan Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Doped Tio2 ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells ◽  
Co Doped

Quantum-dot-sensitized Solar Cells with Metal Electrodes

2014 ◽  
Vol 17 (1) ◽  
Author(s):  
Stavroula Sfaelou ◽  
Vassilios Dracopoulos ◽  
Panagiotis Lianos
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Tin Oxide ◽  
Passivation Layer ◽  
Metal Electrodes ◽  
Nanocrystalline Titania ◽  
Anode Electrode ◽  
Sensitized Solar Cells

AbstractQuantum dot sensitized solar cells have been made by using nanocrystalline titania as photocatalyst, sensitized in the Visible by a combination of quantum dot sensitizers: first a layer of CdS, followed by deposition of CdSe and finally a passivation layer of ZnS on the top. An inox grid was used as anode electrode and its functionality was compared with that of transparent fluorine-doped tin oxide (FTO) electrodes. Cu

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

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