Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect

2021 ◽  
Vol 126 ◽  
pp. 105663
Author(s):  
D.A. Smolyakov ◽  
A.S. Tarasov ◽  
M.A. Bondarev ◽  
A.A. Nikolskaya ◽  
V.K. Vasiliev ◽  
...  
Keyword(s):  
Impurity State ◽  
Admittance Spectroscopy ◽  
Magnetoresistance Effect

Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 767-770 ◽  
Author(s):  
T. Daibou ◽  
M. Oogane ◽  
Y. Ando ◽  
C. Kim ◽  
O. Song ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Tunnel Junctions ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance

Investigation of trapping states in a Nb‐doped rutile by admittance spectroscopy

1986 ◽  
Vol 60 (12) ◽  
pp. 4191-4196 ◽  
Author(s):  
K. Kobayashi ◽  
M. Takata ◽  
Y. Fujimura ◽  
S. Okamoto
Keyword(s):  
Admittance Spectroscopy

Thermal stability of a Si/Si1−xGex quantum well studied by admittance spectroscopy

2000 ◽  
Vol 87 (4) ◽  
pp. 1947-1950 ◽  
Author(s):  
Feng Lin ◽  
Da-wei Gong ◽  
Chi Sheng ◽  
Fang Lu ◽  
Xun Wang
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Admittance Spectroscopy ◽  
Thermal Stability Of

Pressure-tuned colossal magnetoresistance effect in n-type CdCr2Se4

2021 ◽  
Vol 118 (26) ◽  
pp. 262407
Author(s):  
Bowen Zhang ◽  
Chuanchuan Gu ◽  
Chao An ◽  
Xuliang Chen ◽  
Yonghui Zhou ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Magnetoresistance Effect ◽  
Colossal Magnetoresistance Effect

Extraordinary anisotropic magnetoresistance effect at room temperature in Co/Ni multilayers

1996 ◽  
Vol 156 (1-3) ◽  
pp. 369-370
Author(s):  
C. Prados ◽  
D. García ◽  
F. Lesmes ◽  
J.J. Freijo ◽  
A. Hemando
Keyword(s):  
Room Temperature ◽  
Anisotropic Magnetoresistance ◽  
Magnetoresistance Effect

Admittance Spectroscopy of ZnO Crystals

1990 ◽  
Vol 29 (Part 1, No. 8) ◽  
pp. 1426-1430 ◽  
Author(s):  
Yasuo Kanai
Keyword(s):  
Admittance Spectroscopy
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